TK40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK40A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A06N1TK40A06N1TK40A06N1TK40A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan

TK40E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40E06N1TK40E06N1TK40E06N1TK40E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.4 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enhan

TK40P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P03M1TK40P03M1TK40P03M1TK40P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 5.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.3 m (typ.) (VGS = 10

TK40D10J1 www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40D10J1 Switching Regulator Applications Unit: mm 10.00.3 A 9.50.2 0.60.1 Small gate charge: Qg = 76nC (typ.) 3.650.2 Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S

TK40P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P04M1TK40P04M1TK40P04M1TK40P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 7.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.5 m (t

TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40A10J1 Switching Regulator Applications Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement m

TK40J20DMOSFETs Silicon N-Channel MOS (-MOS)TK40J20DTK40J20DTK40J20DTK40J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.0374 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth

TK40S10K3ZMOSFETs Silicon N-channel MOS (U-MOS )TK40S10K3ZTK40S10K3ZTK40S10K3ZTK40S10K3Z1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 14.4 m (typ.) (VGS = 10 V)(2) Low leakage curren

TK40M60UMOSFETs Silicon N-Channel MOS (DTMOS)TK40M60UTK40M60UTK40M60UTK40M60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

TK40F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK40F08K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) 10.0 0.3 Low leakage current: IDSS = 10 A (max) (VDS = 75 V) 0.4 0.19.5 0.2 Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10

TK40A08K3 NMOS (U-MOS) TK40A08K3 : mm :RDS (ON) = 7.0 m () :|Yfs| = 93 S () :IDSS = 10 A () (VDS = 75 V)

TK40X10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK40X10J1 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Small gate charge : Qg = 59 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 15 m(typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: ID

TK40J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK40J60UTK40J60UTK40J60UTK40J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

TK40A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40A10N1TK40A10N1TK40A10N1TK40A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

TK40E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK40E10N1TK40E10N1TK40E10N1TK40E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK40A10K3 Switching Regulator Application Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

TK40J60T www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.068 (typ.) High forward transfer admittance: Yfs = 25 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0

TK40S06N1LMOSFETs Silicon N-channel MOS (U-MOS-H)TK40S06N1LTK40S06N1LTK40S06N1LTK40S06N1L1. Applications1. Applications1. Applications1. Applications Automotive Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 8.7 m (typ.) (VGS = 10 V)(2) Low leakage current: IDS

GrerrPPrPrProSTK400aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.390 @ VGS=10VSuface Mount Package.40V 1.3A550 @ VGS=4.5VESD Protected.DDGSDSOT-89GS(TA=25C unless otherwise noted)

SEMICONDUCTORFTK40P04DTECHNICAL DATAFTK40P04 P-Channel Power MOSFET AIDESCRIPTION CJThe FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MA

SEMICONDUCTORFTK4004TECHNICAL DATAFeathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre

SEMICONDUCTORFTK40N10DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION DIM MILLIMETERSThis advanced high voltage MOSFET is designed to stand high A 6 50 0 2B 5 60 0 2C 5 20 0 2energy in the avalanche mode and switch efficiently. D 1 50 0 2E 2 70 0 2F 2 30 0 1This new high energy device also offers a drainHH 1 00 MAXI 2 30

SEMICONDUCTORFTK4015DTECHNICAL DATAMain Product Characteristics: VDSS -40V D RDS(on) 11m (typ.) GID 20A SSchematic diagram DFeatures and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and GTO-252 top viewgeneral purpose applications Ultra low on-resistance with low gate charge High Power and current

TK40P04Mwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A06N1ITK40A06N1FEATURESLow drain-source on-resistance:RDS(ON) =10.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40J60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.065 (typ.)Easy to control Gate switchingEnhancement mode: V = 3.0 to 5.0V (VDS = 10 V, ID=1mA)thLow leakage current: I = 100 A (max) (V = 600 V)DSS DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40A10N1ITK40A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 8.2m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK40E10N1ITK40E10N1FEATURESLow drain-source on-resistance:RDS(on) 8.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIM