TK40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK40A06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40A06N1 TK40A06N1 TK40A06N1 TK40A06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.4 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhan

TK40E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40E06N1 TK40E06N1 TK40E06N1 TK40E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.4 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3) Enhan

TK40P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P03M1 TK40P03M1 TK40P03M1 TK40P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 5.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.3 m (typ.) (VGS = 10

TK40D10J1 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK40D10J1 Switching Regulator Applications Unit mm 10.0 0.3 A 9.5 0.2 0.6 0.1 Small gate charge Qg = 76nC (typ.) 3.65 0.2 Low drain-source ON-resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 90 S

TK40P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P04M1 TK40P04M1 TK40P04M1 TK40P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.5 m (t

TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK40A10J1 Switching Regulator Applications Unit mm Small gate charge Qg = 76nC (typ.) Low drain-source ON-resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 90 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement m

TK40J20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK40J20D TK40J20D TK40J20D TK40J20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.0374 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth

TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS ) TK40S10K3Z TK40S10K3Z TK40S10K3Z TK40S10K3Z 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 14.4 m (typ.) (VGS = 10 V) (2) Low leakage curren

TK40M60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK40M60U TK40M60U TK40M60U TK40M60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS

TK40F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK40F08K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit mm Low drain-source ON-resistance RDS (ON) = 6.5 m (typ.) 10.0 0.3 Low leakage current IDSS = 10 A (max) (VDS = 75 V) 0.4 0.1 9.5 0.2 Enhancement-model Vth = 3.0 to 4.0 V (VDS = 10

TK40X10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK40X10J1 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Small gate charge Qg = 59 nC (typ.) Low drain-source ON-resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 60 S (typ.) Low leakage current ID

TK40J60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK40J60U TK40J60U TK40J60U TK40J60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS

TK40A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40A10N1 TK40A10N1 TK40A10N1 TK40A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha

TK40E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK40E10N1 TK40E10N1 TK40E10N1 TK40E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3) Enha

TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TK40A10K3 Switching Regulator Application Unit mm Low drain-source ON resistance RDS (ON) = 11.5 m (typ.) High forward transfer admittance Yfs = 80 S Low leakage current IDSS = 10 A (max) (VDS = 100 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

TK40J60T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.068 (typ.) High forward transfer admittance Yfs = 25 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0

TK40S06N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK40S06N1L TK40S06N1L TK40S06N1L TK40S06N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 8.7 m (typ.) (VGS = 10 V) (2) Low leakage current IDS

Gre r r P Pr Pr Pro STK400 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 390 @ VGS=10V Suface Mount Package. 40V 1.3A 550 @ VGS=4.5V ESD Protected. D D G S D SOT-89 G S (TA=25 C unless otherwise noted)

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MA

SEMICONDUCTOR FTK4004 TECHNICAL DATA Feathers ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 m max. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK4004 is a new generation of high voltage and low curre

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 energy in the avalanche mode and switch efficiently. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30

SEMICONDUCTOR FTK4015D TECHNICAL DATA Main Product Characteristics VDSS -40V D RDS(on) 11m (typ.) G ID 20A S Schematic diagram D Features and Benefits Advanced trench MOSFET process technology S Special designed for PWM, load switching and G TO-252 top view general purpose applications Ultra low on-resistance with low gate charge High Power and current

JMTK4005A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 80A Load Switch RDS(ON)

JMTK4004A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 40V,120A Load Switch R

JMTK4006A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 70A Load Switch RDS(ON)

TK40P04M www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40A06N1 ITK40A06N1 FEATURES Low drain-source on-resistance RDS(ON) =10.4m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40J60U FEATURES Low drain-source on-resistance RDS(ON) = 0.065 (typ.) Easy to control Gate switching Enhancement mode V = 3.0 to 5.0V (VDS = 10 V, ID=1mA) th Low leakage current I = 100 A (max) (V = 600 V) DSS DS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40A10N1 ITK40A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK40E10N1 ITK40E10N1 FEATURES Low drain-source on-resistance RDS(on) 8.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIM