TN2221R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STN2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures Large collector current Low collector saturation voltage E Complementary pair with STN2907A TO-92 Ordering Information Type NO. Marking Package Code STN2222A STN2222A TO-92 : Year & Week Code Absolute maximum

STN2222SNPN Silicon TransistorDescription General purpose application Switching application PIN Connection Features Large collector current C Low collector saturation voltage B Complementary pair with STN2907S ESOT-23 Ordering Information Type NO. Marking Package Code HA STN2222S SOT-23 Device Code Year&Week Code

STN2222AS NPN Silicon Transistor Descriptions General purpose application COLLECTOR Switching application 331Features BASE Large collector current Low collector saturation voltage 2EMITTER Complementary pair with STN2907AS SOT-23 Ordering Information Part Number Marking Package XA STN2222AS SOT-23 * Device

STN2222NPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application Features B Large collector current Low collector saturation voltage E Complementary pair with STN2907 TO-92 Ordering Information Type NO. Marking Package Code STN2222 STN2222 TO-92 Absolute maximum ratings Ta=25C Characteristi

STN2222ASFNPN Silicon TransistorDescriptions PIN Connection General purpose application 3 Switching application 1 Features 2 Large collector current SOT-23F Low collector saturation voltage Complementary pair with STN2907ASF Ordering Information Type NO. Marking Package Code XA STN2222ASF SOT-23F Device Code Year&

STN2222SFNPN Silicon TransistorDescription PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2907SF Ordering Information Type NO. Marking Package Code HA STN2222SF SOT-23F Device Code Year&Week

SEMICONDUCTOR KTN2222/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEKB 4.80 MAX: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. GC 3.70 MAXDComplementary to the KTN2907/2907A.D 0.45E 1.00K

SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.1G

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,

SEMICONDUCTOR KTN2222U/AUTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES M B MDIM MILLIMETERSLow Leakage Current _A+2.00 0.20D2: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. _+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_E +2.10 0.20: VCE(sat)=0.3V(Max.) ; IC=150

Spec. No. : C227A3 Issued Date : 2003.03.26 CYStech Electronics Corp.Revised Date : 2014.04.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222A3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Pb-free lead plating and halogen-free package Symbol Outline BTN2222

Spec. No. : C227N3 Issued Date : 2003.06.11 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3Description The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low VCE(sat) Lo

Spec. No. : C227L3 Issued Date : 2004.03.17 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AL3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Complementary to BTP2907AL3 SymbolBTN2222AL3 BBase CCollector E