TN2222A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN2222A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 75
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar TN2222A
TN2222A
Datasheet (PDF)
0.1. Size:254K auk
stn2222a.pdf
STN2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures Large collector current Low collector saturation voltage E Complementary pair with STN2907A TO-92 Ordering Information Type NO. Marking Package Code STN2222A STN2222A TO-92 : Year & Week Code Absolute maximum
0.2. Size:343K auk
stn2222as.pdf
STN2222AS NPN Silicon Transistor Descriptions General purpose application COLLECTOR Switching application 331Features BASE Large collector current Low collector saturation voltage 2EMITTER Complementary pair with STN2907AS SOT-23 Ordering Information Part Number Marking Package XA STN2222AS SOT-23 * Device
0.3. Size:285K auk
stn2222asf.pdf
STN2222ASFNPN Silicon TransistorDescriptions PIN Connection General purpose application 3 Switching application 1 Features 2 Large collector current SOT-23F Low collector saturation voltage Complementary pair with STN2907ASF Ordering Information Type NO. Marking Package Code XA STN2222ASF SOT-23F Device Code Year&
0.4. Size:44K kec
ktn2222ae.pdf
SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary
0.5. Size:53K kec
ktn2222s ktn2222as.pdf
SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,
0.6. Size:315K cystek
btn2222a3.pdf
Spec. No. : C227A3 Issued Date : 2003.03.26 CYStech Electronics Corp.Revised Date : 2014.04.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222A3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Pb-free lead plating and halogen-free package Symbol Outline BTN2222
0.7. Size:284K cystek
btn2222an3.pdf
Spec. No. : C227N3 Issued Date : 2003.06.11 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3Description The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low VCE(sat) Lo
0.8. Size:133K cystek
btn2222al3.pdf
Spec. No. : C227L3 Issued Date : 2004.03.17 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AL3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Complementary to BTP2907AL3 SymbolBTN2222AL3 BBase CCollector E
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