2N5308A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5308A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 7000
Paquete / Cubierta: TO98-3
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2N5308A Datasheet (PDF)
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2n5308.pdf
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2N5308NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Bas
2n5301 2n5302 2n5303.pdf
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Order this documentMOTOROLAby 2N5301/DSEMICONDUCTOR TECHNICAL DATA2N53012N5302High-Power NPN Silicon2N5303Transistors. . . for use in power amplifier and switching circuits applications.20 AND 30 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTORSVCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)NPN SILICON Low CollectorEmitter Saturatio
2n5306.pdf
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2N5306NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Bas
2n5307.pdf
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2N5307NPN General Purpose Amplifier This device designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from Process 05. See MPSA14 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emit
2n5303.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5302.pdf
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2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis
2n5302g.pdf
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2N5302High-Power NPN SiliconTransistorHigh-power NPN silicon transistors are for use in power amplifierand switching circuits applications.Featureshttp://onsemi.com Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc30 AMPERES Pb-Free Package is Available*POWER TRANSISTORNPN SILICONMAXIMUM RATINGS (Note 1) (TJ = 25C unless otherwis
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2n5301.pdf
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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5301DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4398APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
2n5302.pdf
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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399APPLICATIONSDesigned for use in power amplifier and switching circuitsapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
2n5301.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5301 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A Wide Area of Safe Operation Complement to Type 2N4398 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALU
2n5302.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistors 2N5302DESCRIPTIONLow Collector Saturation Voltage-: V = 0.75V(Max.)@ I = 10ACE(sat) CWide Area of Safe OperationComplement to Type 2N4399100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in power amplifier and switching cir
2n5301 2n5302 2n5303.pdf
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Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .