TN2905A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2007 TN2907A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1 TO-226 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter V

STN2907A PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222A TO-92 Ordering Information Type NO. Marking Package Code STN2907A STN2907A TO-92 Absolute maximum ratings Ta=25 C Characteristic Sym

STN2907AS PNP Silicon Transistor Descriptions General purpose application Emitter 2 Switching application 3 Base Base 1 1 Features Large collector current Collector 1 Low collector saturation voltage 2 3 Complementary pair with STN2222AS SOT-23 Ordering Information Part Number Marking Package WA STN2907AS SOT-23

STN2907SF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222SF Ordering Information Type NO. Marking Package Code GA STN2907SF SOT-23F Device Code Year&Week

STN2907ASF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222ASF Ordering Information Type NO. Marking Package Code WA STN2907ASF SOT-23F Device Code Year&We

STN2907S PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B Large collector current IC=-600mA E Low collector saturation voltage VCE(sat)=-0.4V(Max.) @ IC=-150mA, IB=-15mA SOT-23 Complementary pair with STN2222S Ordering Information Type NO. Marking Package Code GA STN2907S

STN2907AEF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current 2 Low collector saturation voltage SOT-523F Ordering Information Type NO. Marking Package Code GT STN2907AEF SOT-523F Device Code Year&Week Code Absolute Maximum Ratings (Ta=25 C)

STN2907 Semiconductor Semiconductor PNP Silicon Transistor Descriptions General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222 Ordering Information Type NO. Marking Package Code STN2907 STN2907 TO-92 Outline Dimensions unit mm 3.35 3.55 4.4 4.6

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. B 4.80 MAX G C 3.70 MAX D Complementary to the KTN2222/2222A. D 0.45 E 1.00

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Low Leakage Current A 2.93 0.20 + B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ A + 2.00 0.20 D 2 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ E + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15

SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. D 0.27+0.10/-0.05 _ Complementar

SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ + A 2.00 0.20 D 2 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100 Peak Drain Current (tp 10 s) IDM 2.8 A S