TN2906AR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2007TN2907APNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1TO-2261. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter V

STN2907APNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222A TO-92 Ordering Information Type NO. Marking Package Code STN2907A STN2907A TO-92 Absolute maximum ratings Ta=25C Characteristic Sym

STN2907AS PNP Silicon Transistor Descriptions General purpose application Emitter2 Switching application 3 BaseBase11Features Large collector current Collector1 Low collector saturation voltage 2 3 Complementary pair with STN2222AS SOT-23 Ordering Information Part Number Marking Package WA STN2907AS SOT-23

STN2907SFPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222SF Ordering Information Type NO. Marking Package Code GA STN2907SF SOT-23F Device Code Year&Week

STN2907ASFPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222ASF Ordering Information Type NO. Marking Package Code WA STN2907ASF SOT-23F Device Code Year&We

STN2907SPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application C Features B Large collector current: IC=-600mA E Low collector saturation voltage: VCE(sat)=-0.4V(Max.) @ IC=-150mA, IB=-15mA SOT-23 Complementary pair with STN2222S Ordering Information Type NO. Marking Package Code GA STN2907S

STN2907AEFPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current 2 Low collector saturation voltage SOT-523F Ordering Information Type NO. Marking Package Code GT STN2907AEF SOT-523F Device Code Year&Week Code Absolute Maximum Ratings (Ta=25C)

STN2907Semiconductor Semiconductor PNP Silicon TransistorDescriptions General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222 Ordering Information Type NO. Marking Package Code STN2907 STN2907 TO-92 Outline Dimensions unit : mm 3.35~3.55 4.4~4.6

SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES L B LDIM MILLIMETERSLow Leakage Current_+2.93 0.20AB 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

SEMICONDUCTOR KTN2907/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage Current: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEK: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. B 4.80 MAXGC 3.70 MAXDComplementary to the KTN2222/2222A.D 0.45E 1.00

SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Low Leakage Current A 2.93 0.20+B 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_A+2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_E +: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15

SEMICONDUCTOR KTN2907AETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESBLow Leakage CurrentDDIM MILLIMETERS: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.D 0.27+0.10/-0.05_Complementar

SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_+A 2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate SourceAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VDrain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100Peak Drain Current (tp 10 s) IDM 2.8 AS