TN2907A Datasheet. Equivalente

 ..1. Size:92K  fairchild semi
 tn2907a.pdf

September 2007 TN2907A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1 TO-226 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter V

 0.1. Size:205K  auk
 stn2907a.pdf

STN2907A PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222A TO-92 Ordering Information Type NO. Marking Package Code STN2907A STN2907A TO-92 Absolute maximum ratings Ta=25 C Characteristic Sym

 0.2. Size:358K  auk
 stn2907as.pdf

STN2907AS PNP Silicon Transistor Descriptions General purpose application Emitter 2 Switching application 3 Base Base 1 1 Features Large collector current Collector 1 Low collector saturation voltage 2 3 Complementary pair with STN2222AS SOT-23 Ordering Information Part Number Marking Package WA STN2907AS SOT-23

 0.3. Size:281K  auk
 stn2907asf.pdf

STN2907ASF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222ASF Ordering Information Type NO. Marking Package Code WA STN2907ASF SOT-23F Device Code Year&We

 0.4. Size:262K  auk
 stn2907aef.pdf

STN2907AEF PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current 2 Low collector saturation voltage SOT-523F Ordering Information Type NO. Marking Package Code GT STN2907AEF SOT-523F Device Code Year&Week Code Absolute Maximum Ratings (Ta=25 C)

 0.5. Size:704K  kec
 ktn2907s ktn2907as.pdf

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Low Leakage Current A 2.93 0.20 + B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

 0.6. Size:83K  kec
 ktn2907ae.pdf

SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. D 0.27+0.10/-0.05 _ Complementar

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 ktn2907u ktn2907au.pdf

SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ + A 2.00 0.20 D 2 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.