TN2907AR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2007TN2907APNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1TO-2261. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter V

STN2907APNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features Large collector current Low collector saturation voltage Complementary pair with STN2222A TO-92 Ordering Information Type NO. Marking Package Code STN2907A STN2907A TO-92 Absolute maximum ratings Ta=25C Characteristic Sym

STN2907AS PNP Silicon Transistor Descriptions General purpose application Emitter2 Switching application 3 BaseBase11Features Large collector current Collector1 Low collector saturation voltage 2 3 Complementary pair with STN2222AS SOT-23 Ordering Information Part Number Marking Package WA STN2907AS SOT-23

STN2907ASFPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current Low collector saturation voltage 2 SOT-23F Complementary pair with STN2222ASF Ordering Information Type NO. Marking Package Code WA STN2907ASF SOT-23F Device Code Year&We

STN2907AEFPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 Large collector current 2 Low collector saturation voltage SOT-523F Ordering Information Type NO. Marking Package Code GT STN2907AEF SOT-523F Device Code Year&Week Code Absolute Maximum Ratings (Ta=25C)

SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Low Leakage Current A 2.93 0.20+B 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

SEMICONDUCTOR KTN2907AETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESBLow Leakage CurrentDDIM MILLIMETERS: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.D 0.27+0.10/-0.05_Complementar

SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_+A 2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.