TN3405
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN3405
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.56
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar TN3405
TN3405
Datasheet (PDF)
9.1. Size:426K cystek
mtn3400n3.pdf 
Spec. No. : C414N3 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2017.05.03 Page No. : 1/ 9 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3400N3 ID@VGS=10V, TA=25C 5.8A 20m VGS=10V, ID=5.8A22m RDSON(TYP) VGS=4.5V, ID=5A 27m VGS=2.5V, ID=4A Features Low on-resistance Low gate charge Excellent thermal and electrical
9.2. Size:215K semtech
mmftn3406.pdf
MMFTN3406 N-Channel Enhancement Mode Power MOSFET 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID 3.6 ADrain Current - Pulsed 1) IDM 15 APower Dissipation 1) Pd 1.4 WTherm
9.3. Size:368K semtron
stn3400a.pdf
STN3400A 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400A is the N-Channel logic 30V/5.6A, RDS(ON) =28m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V produced using high cell density. advanced trench 30V/3.2A, RDS(ON) =35m(typ.)@VGS =2.5V technology to provide excellent RDS
9.4. Size:371K semtron
stn3404.pdf
STN3404 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3404 is the N-Channel logic enhancement 30V/6.0A, RDS(ON) =18m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.8A, RDS(ON) =25m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l
9.5. Size:372K semtron
stn3406.pdf
STN3406 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3406 is the N-Channel logic enhancement 30V/5.6A, RDS(ON) =23m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4.2A, RDS(ON) =35m(typ.)@VGS =4.5V high cell density. advanced trench technology to provide excellent Super high density cell design for extremely l
9.6. Size:373K semtron
stn3400.pdf
STN3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3400 is the N-Channel logic enhancement 30V/5.8A, RDS(ON) =24m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/5.0A, RDS(ON) =26m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3.5A, RDS(ON) =30m(typ.)@VGS =2.5V provide excellent RDS(
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