TN3415 Datasheet. Equivalente

 9.1. Size:280K  cystek
 mtn3418cn3.pdf

Spec. No. C570N3 Issued Date 2012.02.03 CYStech Electronics Corp. Revised Date 2012.07.30 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.4A MTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri

 9.2. Size:330K  cystek
 mtn3410j3.pdf

Spec. No. C433J3 Issued Date 2008.12.24 CYStech Electronics Corp. Revised Date 2010.07.22 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410

 9.3. Size:274K  cystek
 mtn3418s3.pdf

Spec. No. C726S3 Issued Date 2011.12.20 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.9A MTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

 9.4. Size:282K  cystek
 mtn3418bn3.pdf

Spec. No. C580N3 Issued Date 2011.09.16 CYStech Electronics Corp. Revised Date Page No. 1/7 N-CHANNEL MOSFET BVDSS 30V ID 1.7A MTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac

 9.5. Size:289K  cystek
 mtn3410f3.pdf

Spec. No. C795F3 Issued Date 2011.03.01 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100V RDS(ON) 20m (max.) MTN3410F3 ID 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 9.6. Size:280K  cystek
 mtn3418n3.pdf

Spec. No. C726N3 Issued Date 2009.08.21 CYStech Electronics Corp. Revised Date 2013.11.29 Page No. 1/7 N-Channel MOSFET BVDSS 30V ID 1.9A MTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ

 9.7. Size:360K  semtron
 stn3414.pdf

STN3414 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS