TN3416 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN3416
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar TN3416
TN3416 Datasheet (PDF)
mtn3418cn3.pdf
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Spec. No. : C570N3 Issued Date : 2012.02.03 CYStech Electronics Corp.Revised Date : 2012.07.30 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.4AMTN3418CN3 RDSON(max) @VGS=10V 300m RDSON(max) @VGS=4V 450m Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage dri
mtn3410j3.pdf
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Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp.Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100VID 50AMTN3410J3 RDS(ON) 30m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline MTN3410
mtn3418s3.pdf
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Spec. No. : C726S3 Issued Date : 2011.12.20 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.9AMTN3418S3 RDSON(max) 110m Description The MTN3418S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ
mtn3418bn3.pdf
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Spec. No. : C580N3 Issued Date : 2011.09.16 CYStech Electronics Corp.Revised Date : Page No. : 1/7 N-CHANNEL MOSFET BVDSS 30VID 1.7AMTN3418BN3 RDSON(max) 450m Description The MTN3418BN3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High speed switching Low-voltage drive(2.5V) Easily designed drive circuits Pb-free pac
mtn3410f3.pdf
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Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS : 100V RDS(ON) : 20m (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
mtn3418n3.pdf
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Spec. No. : C726N3 Issued Date : 2009.08.21 CYStech Electronics Corp.Revised Date : 2013.11.29 Page No. : 1/7 N-Channel MOSFET BVDSS 30VID 1.9AMTN3418N3 RDSON(max) 110m Description The MTN3418N3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circ
stn3414.pdf
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STN3414 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN3414 is the N-Channel logic enhancement 20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V provide excellent RDS
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .