TP2906R Todos los transistores

 

TP2906R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TP2906R

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO92

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TP2906R datasheet

 9.1. Size:173K  cystek
 btp2907a3.pdf pdf_icon

TP2906R

Spec. No. C317A3-H Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2005.06.29 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3 Description The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. Low collector saturation voltage High speed switching. Complementa

 9.2. Size:258K  cystek
 btp2907an3.pdf pdf_icon

TP2906R

Spec. No. C317N3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2008.03.21 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTP2907AN3 Description The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low V CE(sat)

 9.3. Size:192K  cystek
 btp2907al3.pdf pdf_icon

TP2906R

Spec. No. C317L3-H Issued Date 2003.04.15 CYStech Electronics Corp. Revised Date 2006.07.04 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907AL3 Description The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. Low V CE(sat)

 9.4. Size:257K  cystek
 btp2907sl3.pdf pdf_icon

TP2906R

Spec. No. C824L3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2013.11.12 Page No. 1/7 Low V PNP Epitaxial Planar Transistor CE(sat) BTP2907SL3 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.5V(max) (I =-1A, I =-100mA). CE C B Pb-free lead plating and halogen-free package Symbol Outline BTP2907SL3

MOSTRAR MÁS

Otros transistores... TP2894R , TP2904 , TP2904A , TP2905 , TP2905A , TP2906 , TP2906A , TP2906AR , A1941 , TP2907 , TP2907A , TP2907AR , TP2907R , TP2923 , TP2924 , TP2925 , TP2926 .

 

 

 

 

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