TP4401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46m ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

Spec. No. C808H8 Issued Date 2013.09.02 CYStech Electronics Corp. Revised Date Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP4409H8 ID -15A 7.3m VGS=-10V, ID=-15A RDSON(TYP) 11m VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

Spec. No. C791Q8 Issued Date 2010.07.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4403Q8 RDSON(MAX) 50m ID -6.1A Description The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

Spec. No. C808Q8 Issued Date 2012.04.03 CYStech Electronics Corp. Revised Date 2014.05.16 Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7m (typ) RDSON@VGS=-4.5V, ID=-10A 11.4m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free

Green Product STB/P440S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8 @ VGS=10V TO-220 & TO-263 package. 40V 65A 11.5 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

JMTP440P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Applications -40V, -6A Load Switch RDS(ON)

JMTP4407B Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -11A PWM Applications DS D R

JMTP4406A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 13A Load Switch RDS(ON)

JMTP4407A Description JMT P-channel Enhancement Mode Power MosFET Features Applications -30V, -12A Load Switch RDS(ON)