2N5322V Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5322V
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 75 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 125
Encapsulados: TO39
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2N5322V datasheet
2n5322 2n5323.pdf
2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. TO-39 The compl
2n5322.pdf
2N5322 SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNP transistor in Jedec TO-39 metal case. It is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN type is 2N5320. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-B
2n5320 2n5321 2n5322 2n5323.pdf
DATA SHEET 2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25 C
Otros transistores... 2N5321W , 2N5321Y , 2N5322 , 2N5322BL , 2N5322BR , 2N5322GN , 2N5322O , 2N5322R , 2SC2655 , 2N5322W , 2N5322Y , 2N5323 , 2N5323BL , 2N5323BR , 2N5323GN , 2N5323O , 2N5323R .
History: 2N606
History: 2N606
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