2N5323O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5323O
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: TO39
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2N5323O Datasheet (PDF)
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DATA SHEET2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5320 Series types are Complementary Silicon Power Transistors manufactured by the Epitaxial Planar Process, mounted in a hermetically sealed metal case, designed for amplifier and switching applications. MAXIMUM RATINGS (TC=25C
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2n5320 2n5321.pdf

2N53202N5321SMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIAL PLANAR NPNTRANSISTORS MEDIUM POWER AMPLIFIER PNP COMPLEMENTS ARE 2N5322 AND2N5323DESCRIPTION The 2N5320 and 2N5321 are silicon epitaxialplanar NPN transistors in Jedec TO-39 metalcase. They are especially intended forhigh-voltage medium power application inindustrial and commercial equipments.TO-39The compl
Otros transistores... 2N5322R , 2N5322V , 2N5322W , 2N5322Y , 2N5323 , 2N5323BL , 2N5323BR , 2N5323GN , D965 , 2N5323R , 2N5323V , 2N5323W , 2N5323Y , 2N5324 , 2N5325 , 2N5326 , 2N5327 .
History: 2N3965CSM | 2SB443A | NKT108 | KRC663U | 2SC765 | 2N5862 | DTC123JEB
History: 2N3965CSM | 2SB443A | NKT108 | KRC663U | 2SC765 | 2N5862 | DTC123JEB



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