2N5332 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5332
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 800 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO46
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2N5332 datasheet
2n5336 2n5337 2n5338 2n5339.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5338lcc4.pdf
2N5339LCC4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0
2n5333.pdf
2N5333 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
2n5334.pdf
2N5334 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
Otros transistores... 2N5325 , 2N5326 , 2N5327 , 2N5328 , 2N5329 , 2N533 , 2N5330 , 2N5331 , MPSA42 , 2N5333 , 2N5334 , 2N5335 , 2N5336 , 2N5336X , 2N5337 , 2N5337A-220M , 2N5337X .
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