2N5333 Todos los transistores

2N5333 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

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2N5339LCC4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0

2N5334 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

2N5339LCC4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0

2N5335 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/560 DEVICES LEVELS 2N5339 2N5339U3 JAN JANTX JANTXV JANS ABSOLUTE MA

NPN Power Silicon Transistor 2N5339 Features Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/560 TO-39 (TO-205AD) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 100 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current IC 5.0 Adc Total Power Dissipation @ TA = 2