2N5335 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5335
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 6 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 75 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO39
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2N5335 Datasheet (PDF)
2n5335.pdf

2N5335Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5336 2n5337 2n5338 2n5339.pdf

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2n5338lcc4.pdf

2N5339LCC4MECHANICAL DATADimensions in mm (inches)NPN SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0
2n5333.pdf

2N5333Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
Otros transistores... 2N5328 , 2N5329 , 2N533 , 2N5330 , 2N5331 , 2N5332 , 2N5333 , 2N5334 , 2SC1740 , 2N5336 , 2N5336X , 2N5337 , 2N5337A-220M , 2N5337X , 2N5338 , 2N5338X , 2N5339 .
History: 2N3445 | RN1904 | BDY39 | 2SB32 | 2SD368 | 2SA259 | BC857CQA
History: 2N3445 | RN1904 | BDY39 | 2SB32 | 2SD368 | 2SA259 | BC857CQA



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