ZTX107K . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZTX107K
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar ZTX107K
ZTX107K Datasheet (PDF)
ztx1053a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1053AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i D D E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1053AELECTRICAL CHARACTERISTICS (at Tamb
ztx1055a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1055AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i i D i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1055AELECTRICAL CHARACTERISTICS (at T
ztx1047a.pdf
Si i O A A Di O ZT 0 AHi H Ai T A SiSTO iSS A A Y T V i V I i i i I TI D D I i i in TO o a i I A SO T A i ATi S T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 A T i A HA A T iSTi S a Ta unI o h i a T I T IT DITI II V V I V I II i V V I
ztx1051a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1051AHIGH GAIN TRANSISTORISSUE 3 FEBRUARY 95 T V V V i V I i i I I i I TI i i i i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1051AELECTRICAL CHARACTERISTICS (at Tam
ztx1048a.pdf
Si i O A A Di O ZT 0 8AHi H Ai T A SiSTO iSS A Y T V V V V i V I i i I I TI D Ii i i in D D TO o a i I A SO T A i ATi S T T 8 IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 8A T i A HA A T iSTi S a Ta unI o h i a T 8 T IT DITI I T II V 8 V
ztx1049a.pdf
A Product Line of Diodes Incorporated ZTX1049A Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 4 A Peak Pulse Current ICM 20 A Base Current IB 500 mA Thermal Characteristics (@TA = +25C, unless ot
ztx1056a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1056AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I i V I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1056AELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050