ZTX108CK
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZTX108CK
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 5
pF
Ganancia de corriente contínua (hfe): 450
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar ZTX108CK
ZTX108CK
Datasheet (PDF)
9.1. Size:136K diodes
ztx1053a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1053AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i D D E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1053AELECTRICAL CHARACTERISTICS (at Tamb
9.2. Size:129K diodes
ztx1055a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1055AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I V i V I I TI i i i i i i D i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1055AELECTRICAL CHARACTERISTICS (at T
9.3. Size:110K diodes
ztx1047a.pdf
Si i O A A Di O ZT 0 AHi H Ai T A SiSTO iSS A A Y T V i V I i i i I TI D D I i i in TO o a i I A SO T A i ATi S T T IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 A T i A HA A T iSTi S a Ta unI o h i a T I T IT DITI II V V I V I II i V V I
9.4. Size:115K diodes
ztx1051a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1051AHIGH GAIN TRANSISTORISSUE 3 FEBRUARY 95 T V V V i V I i i I I i I TI i i i i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1051AELECTRICAL CHARACTERISTICS (at Tam
9.5. Size:112K diodes
ztx1048a.pdf
Si i O A A Di O ZT 0 8AHi H Ai T A SiSTO iSS A Y T V V V V i V I i i I I TI D Ii i i in D D TO o a i I A SO T A i ATi S T T 8 IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZT 0 8A T i A HA A T iSTi S a Ta unI o h i a T 8 T IT DITI I T II V 8 V
9.6. Size:282K diodes
ztx1049a.pdf
A Product Line of Diodes Incorporated ZTX1049A Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 4 A Peak Pulse Current ICM 20 A Base Current IB 500 mA Thermal Characteristics (@TA = +25C, unless ot
9.7. Size:124K diodes
ztx1056a.pdf
NPN SILICON PLANAR MEDIUM POWERZTX1056AHIGH GAIN TRANSISTORISSUE 3 JANUARY 1995 T V V i I i V I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T Ii i Ii ed, applied orpply of anyZTX1056AELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
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