2N54 Todos los transistores

 

2N54 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N54

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 45 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 60 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.5 MHz

Ganancia de corriente contínua (hfe): 19

Empaquetado / Estuche: TO50-3

Búsqueda de reemplazo de transistor bipolar 2N54

 

2N54 Datasheet (PDF)

1.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf Size:317K _rca

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1.2. 2n5457re.pdf Size:110K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N Channel  Depletion 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS

 1.3. 2n5400 2n5401.pdf Size:177K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5400/D Amplifier Transistors 2N5400 PNP Silicon * 2N5401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3

1.4. 2n5460 2n5461 2n5462.pdf Size:116K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5460/D JFET Amplifiers 2N5460 P Channel  Depletion 2 DRAIN thru 2N5462 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Valu

 1.5. 2n5401 3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter •

1.6. 2n5415 2n5416 cnv 2.pdf Size:51K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING • Low current (max. 200 mA) PIN DESCRIPTION • High voltage (m

1.7. 2n5401.pdf Size:52K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification 2004 Oct 28 Supersedes data of 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current (max. 300 mA) PIN DESCRIPTION • High voltage (max. 150 V). 1 collector 2 base APPLICATIONS 3 emitter • G

1.8. 2n5415 2n5416.pdf Size:51K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING • Low current (max. 200 mA) PIN DESCRIPTION • High voltage (m

1.9. 2n5415 2n5416 .pdf Size:47K _st

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2N5415 2N5416 ® SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching

1.10. 2n5401hr.pdf Size:432K _st

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2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 BVCEO 150 V 1 1 IC (max) 0.5 A 2 2 3 HFE at 10 V - 150 mA > 60 TO-18 LCC-3 3 • Hermetic packages 4 • ESCC and JANS qualified 1 • Up to 100 krad(Si) low dose rate 2 UB Description Pin 4 in UB is connected to the metallic lid. The 2N5401HR is a silicon planar PNP transistor

1.11. 2n5415 2n5416.pdf Size:45K _st

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2N5415 2N5416 ® SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching

1.12. 2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf Size:357K _fairchild_semi

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February 2009 2N5484/5485/5486 MMBF5484/5485/5486 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 — © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 — © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 — © 2007

1.13. 2n5400.pdf Size:546K _fairchild_semi

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2N5400 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 120 V VCBO Collector-Base Voltage 130 V VEBO Emitter-Base Voltage 5.0 V ICCollector Current - Continuous600mA Oper

1.14. 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf Size:129K _fairchild_semi

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2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25°C unless otherwise noted S

1.15. 2n5401 mmbt5401.pdf Size:75K _fairchild_semi

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2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V I

1.16. 2n5484 mmbf5484.pdf Size:754K _fairchild_semi

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2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value

1.17. 2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf Size:114K _fairchild_semi

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2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25°C unless otherwise noted -

1.18. 2n5400.pdf Size:56K _samsung

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2N5400 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page : 1 (2N5400)

1.19. 2n5401.pdf Size:53K _samsung

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2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Dissipation PC 625 m

1.20. 2n5484 sst5484 2n5485 sst5485 2n5486 sst5486.pdf Size:85K _vishay

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2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 -0.3 to -3 -25 3 1 2N/SST5485 -0.5 to -4 -25 3.5 4 2N/SST5486 -2 to -6 -25 4 8 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mi

1.21. 2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf Size:48K _vishay

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2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 –1 2N/SST5461 1 to 7.5 40 1.5 –2 2N/SST5462 1.8 to 9 40 2 –4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage

1.22. 2n5432 2n5433 2n5434.pdf Size:51K _vishay

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2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2N5432 <5 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 2.5 ns D High-Speed Analog Circuit

1.23. 2n5400 2n5401.pdf Size:80K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.24. 2n5457 2n5458 2n5459.pdf Size:59K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.25. 2n5460 2n5461 2n5462.pdf Size:62K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.26. 2n5490 2n5492 2n5494 2n5496.pdf Size:70K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.27. 2n5415 2n5416 2.pdf Size:64K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.28. 2n5484 2n5485 2n5486.pdf Size:74K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.29. 2n5401.pdf Size:275K _mcc

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 2N5401 MCC TM Micro Commercial Components ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 150 — Collector–Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 mAdc, IE = 0) 160 — Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — Vdc (IE

1.30. 2n5401g.pdf Size:121K _onsemi

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2N5401 Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Der

1.31. 2n5401-d.pdf Size:145K _onsemi

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2N5401 Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Der

1.32. 2n5460 2n5461 2n5462.pdf Size:60K _onsemi

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2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features • Pb-Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain - Gate Voltage VDG 40 Vdc GATE Reverse Gate - Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc 1 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Junct

1.33. 2n5486.pdf Size:146K _onsemi

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2N5486 JFET VHF/UHF Amplifiers N-Channel — Depletion Features • Pb-Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit 3 GATE Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGSR 25 Vdc 2 SOURCE Drain Current ID 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC =

1.34. 2n5457 2n5458.pdf Size:138K _onsemi

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2N5457, 2N5458 JFETs - General Purpose N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. http://onsemi.com Features 1 DRAIN • N-Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance 3 • High DC Input Resistance GATE • Low Transfer and Input Capacitance

1.35. 2n5401rlrag.pdf Size:121K _onsemi

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2N5401 Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector - Emitter Voltage VCEO 150 Vdc Collector - Base Voltage VCBO 160 Vdc 1 Emitter - Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Der

1.36. 2n5401.pdf Size:219K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain,  ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N5401L-x-AB3-R 2N5401G-x-AB3-R SOT-89 B C E Tape Reel 2N5401L-x-T92-B 2N5401G-x-T92-B TO-92 E B C T

1.37. 2n5401.pdf Size:250K _auk

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 2N5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier E • High voltage application Features B • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : C VCE(sat)=-0.5V(MAX.) TO-92 • Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-9

1.38. 2n5401n.pdf Size:249K _auk

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2N5401N Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551N Ordering Information Type NO. Marking Package Code 2N5401N 2N5401 T

1.39. 2n5452 2n5453 2n5454.pdf Size:65K _intersil

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1.40. 2n5427-29 2n5430.pdf Size:132K _mospec

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A A A

1.41. 2n5416ua.pdf Size:934K _no

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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

1.42. 2n5415ua.pdf Size:934K _no

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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

1.43. 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf Size:495K _no

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1.44. 2n5415u4.pdf Size:934K _no

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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

1.45. 2n5416s.pdf Size:934K _no

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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

1.46. 2n5416u4.pdf Size:934K _no

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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA

1.47. 2n5441.pdf Size:248K _no

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1.48. 2n5407x.pdf Size:12K _semelab

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2N5407X Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 (0.035)max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.49. 2n5414cecc.pdf Size:11K _semelab

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2N5414CECC Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 50V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)

1.50. 2n5428a.pdf Size:17K _semelab

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2N5428A MECHANICAL DATA MEDIUM POWER Dimensions in mm NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) VCEO Co

1.51. 2n5467.pdf Size:11K _semelab

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2N5467 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 400V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.52. 2n5468.pdf Size:11K _semelab

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2N5468 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

1.53. 2n5401dcsm.pdf Size:10K _semelab

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2N5401DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 150V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.6A C (0.

1.54. 2n5469.pdf Size:11K _semelab

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2N5469 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

1.55. 2n5404 2n5405 2n5406 2n5407.pdf Size:13K _semelab

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2N5404 2N5405 2N5406 2N5407 MECHANICAL DATA SMALL SIGNAL Dimensions in mm PNP TRANSISTORS 8.89 (0.35) 9.40 (0.37) IN TO-5 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 38.1 (1.500) APPLICATIONS min. 7.75 (0.305) 8.51 (0.335) dia. Small signal PNP transistors for relay 5.08 (0.200) switching resistor logic circuits and typ. general purpose appli

1.56. 2n5430x.pdf Size:11K _semelab

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2N5430X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

1.57. 2n5401csm.pdf Size:11K _semelab

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2N5401CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 150V A = (0.04 ± 0.00

1.58. 2n5414.pdf Size:11K _semelab

2N54

2N5414 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 50V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.59. 2n5400.pdf Size:375K _secos

2N54
2N54

2N5400 -0.6 A, -130 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Switching and amplification in high voltage  Applications such as telephony TO-92  Low current(max.600mA)  High voltage(max.130V) G H  Emitter  Base  Collector J A D Millimeter

1.60. 2n5401.pdf Size:337K _secos

2N54
2N54

2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G H Switching and amplification in high voltage Applications such as telephony J Low current (max. 600mA) A D Millimeter REF. Min. Max. B High voltage (max. 160V) A 4.40 4.70 B 4.30

1.61. 2n5400.pdf Size:149K _cdil

2N54
2N54

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N5400 TO-92 Plastic Package C B E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 120 V Collector Base Voltage VCBO 130 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA

1.62. 2n5415 16.pdf Size:201K _cdil

2N54
2N54

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emit

1.63. 2n5401.pdf Size:274K _cdil

2N54
2N54

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE C B E High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 150 V Collector

1.64. 2n5496.pdf Size:237K _cdil

2N54
2N54

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR 2N5496 TO-220 Plastic Package Medium Power Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION VALUE UNIT Collector Base Voltage (Open emitter) VCBO 90 V Collector Emitter Voltage(open base) VCEO 70 V Collector Emitter Voltage(Vbe=1.5

1.65. 2n5415 2n5416.pdf Size:140K _cdil

2N54
2N54

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emitter Voltage

1.66. 2n5498.pdf Size:95K _jmnic

2N54
2N54

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5498 DESCRIPTION ·With TO-3 package ·High DC current gain and low saturation voltage ·High Safe Operating Area APPLICATIONS ·Designed for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers,

1.67. 2n5490 2n5492 2n5494 2n5496.pdf Size:118K _jmnic

2N54
2N54

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION · ·With TO-220 package ·High power dissipation APPLICATIONS ·For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS

1.68. 2n5400s.pdf Size:33K _kec

2N54
2N54

SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=-130V, VCEO=-120V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=-100nA(Max.) @VCB=-100V J 0.

1.69. 2n5400.pdf Size:32K _kec

2N54
2N54

SEMICONDUCTOR 2N5400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-130V, VCEO=-120V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-100nA(Max.) @VCB=-100V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(

1.70. 2n5401s.pdf Size:33K _kec

2N54
2N54

SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=-160V, VCEO=-150V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=-50nA(Max.) @VCB=-120V J 0.1

1.71. 2n5401c.pdf Size:32K _kec

2N54
2N54

SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(

1.72. 2n5401.pdf Size:32K _kec

2N54
2N54

SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=-160V, VCEO=-150V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=-50nA(Max.) @VCB=-120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=-0.5V(M

1.73. 2n5447-49 2n5450.pdf Size:143K _microelectronics

2N54
2N54



1.74. 2n5400.pdf Size:204K _lge

2N54
2N54

 2N5400(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.130v) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -130 V

1.75. 2n5401.pdf Size:204K _lge

2N54
2N54

 2N5401(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -160 V

1.76. 2n5401.pdf Size:680K _wietron

2N54
2N54

2N5401 PNP Transistors TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5401 Unit Collector-Emitter Voltage V CEO -150 Vdc Collector-Base Voltage VCBO -160 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC 600 mAdc Total Device Dissipation T =25 C PD W 0.625 A Junction Temperature T 150 j C Storage, Temperature Tstg

1.77. h2n5401.pdf Size:52K _hsmc

2N54
2N54

Spec. No. : HE6203 HI-SINCERITY Issued Date : 1992.09.22 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. TO-92 Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))

1.78. 2n5401.pdf Size:301K _shenzhen

2N54
2N54

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage 1.EMITTER Applications such as telephony 2.BASE Low current(max. 600mA) High voltage(max.160v) 3.COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

1.79. 2n5401.pdf Size:307K _can-sheng

2N54
2N54

TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) TRANSISTOR (PNP) TRANSISTOR (PNP) 2N5401 TRANSISTOR (PNP) FEATURE FEATURE FEATURE FEATURE TO-92 TO-92 TO-92 TO-92 � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Applications su

1.80. 3ca5415 2n5415.pdf Size:143K _china

2N54

3CA5415(2N5415)型 PNP 硅高频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 10 W 极 ICM 1 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥200 V V(BR)CEO ICE=0.1mA ≥200 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=175V ≤50 μA 直 ICEO VEB=150V ≤50 μA 流 参 IEBO VEB=4V ≤20 μA 数 IC=0.05A VCEsat ≤2.5 V IB=0.

1.81. 3ca5416 2n5416.pdf Size:111K _china

2N54

3CA5416(2N5416)型 PNP 硅高频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 10 W 极 ICM 1 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥350 V V(BR)CEO ICE=0.1mA ≥300 V V(BR)EBO IEB=0.1mA ≥6.0 V ICBO VCB=280V ≤50 μA 直 ICEO VEB=150V ≤50 μA 流 参 IEBO VEB=6V ≤20 μA 数 IC=0.05A VCEsat ≤2.5 V IB=0.

1.82. 2n5401s.pdf Size:225K _first_silicon

2N54
2N54

SEMICONDUCTOR 2N5401S TECHNICAL DATA High Voltage Transistor FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT–23 2N5401S 2L 3000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V – 150 Vdc CEO 3 COLLECTOR Collector–Base Voltage V CB

1.83. 2n5401.pdf Size:170K _first_silicon

2N54
2N54

SEMICONDUCTOR 2N5401 TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAX E B 4.80 MAX G High Voltage(Max.160v) C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) H J 14.00 0.50 + L 2

Otros transistores... 2N5388 , 2N5389 , 2N538A , 2N538M , 2N539 , 2N5390 , 2N5399 , 2N539A , 2N2219 , 2N540 , 2N5400 , 2N5401 , 2N5404 , 2N5405 , 2N5406 , 2N5407 , 2N5408 .

 

 
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