2N541A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N541A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N541A
2N541A Datasheet (PDF)
2n5415 2n5416 cnv 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
2n5415 2n5416.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
2n5415 2n5416.pdf
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2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
2n5415 2n5416 .pdf
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2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
2n5415 2n5416 2.pdf
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2n5415u4.pdf
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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
2n5416ua.pdf
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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
2n5416u4.pdf
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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
2n5415ua.pdf
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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
2n5416s.pdf
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INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
2n5414.pdf
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2N5414Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5414cecc.pdf
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2N5414CECCDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
2n5415 2n5416.pdf
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Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emitter Voltage
2n5415 16.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emit
3ca5416 2n5416.pdf
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3CA5416(2N5416) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 350 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=280V 50 A ICEO VEB=150V 50 A IEBO VEB=6V 20 A IC=0.05A VCEsat 2.5 V IB=0.
3ca5415 2n5415.pdf
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3CA5415(2N5415) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 200 V V(BR)CEO ICE=0.1mA 200 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=175V 50 A ICEO VEB=150V 50 A IEBO VEB=4V 20 A IC=0.05A VCEsat 2.5 V IB=0.
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .