ZTX555 Todos los transistores

 

ZTX555 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZTX555
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar ZTX555

 

ZTX555 Datasheet (PDF)

 ..1. Size:59K  diodes
ztx554 ztx555.pdf

ZTX555
ZTX555

PNP SILICON PLANAR4 ZTX554MEDIUM POWER TRANSISTORS5 ZTX555ISSUE 1 MARCH 94 T V I V i tfns1000800600E-LinetdnsTO92 Compatible400 100ABSOLUTE MAXIMUM RATINGS.200 50 T T T IT0 0 II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T

 9.1. Size:53K  diodes
ztx552 ztx553 2.pdf

ZTX555
ZTX555

PNP SILICON PLANAR2 ZTX552MEDIUM POWER TRANSISTORS3 ZTX553ISSUE 1 MARCH 94 T V I V tftsnSS3 600 i 2 400E-Line1 200TO92 CompatibleABSOLUTE MAXIMUM RATINGS.100 T T T IT0 0 II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T T T IT DITI I I II V V I

 9.2. Size:55K  diodes
ztx556 ztx557.pdf

ZTX555
ZTX555

PNP SILICON PLANAR MEDIUM POWER6 ZTX556HIGH VOLTAGE TRANSISTORS7 ZTX557ISSUE 1 JULY 94 T V I V tr i s2.01.51.0td E-LinensTO92 Compatible100ABSOLUTE MAXIMUM RATINGS.0.550 T T T IT0 0 II V I V V II i V I V V i V I V V I I i II I Di i i i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI

 9.3. Size:90K  diodes
ztx550 ztx551.pdf

ZTX555
ZTX555

PNP SILICON PLANAR0 ZTX550MEDIUM POWER TRANSISTORS1 ZTX551ISSUE 1 MARCH 94 T V I V i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT-10 II V I V 8 V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T T T IT DITI I I II V 8 V I -10 V I II i V V I i i V I

 9.4. Size:56K  diodes
ztx558.pdf

ZTX555
ZTX555

PNP SILICON PLANAR MEDIUM POWER 8 ZTX558HIGH VOLTAGE TRANSISTORISSUE 1 APRIL 94 T V I V i B=10E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V1 10 20 II i V I V V i V I V V i II I Di i i i T T T =10ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I V I II i V V I V I i V V I V I 1 10

 9.5. Size:50K  diodes
ztx552 ztx553.pdf

ZTX555
ZTX555

PNP SILICON PLANAR2 ZTX552MEDIUM POWER TRANSISTORS3 ZTX553ISSUE 1 MARCH 94 T V I V tftsnSS3 600 i 2 400E-Line1 200TO92 CompatibleABSOLUTE MAXIMUM RATINGS.100 T T T IT0 0 II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T T T IT DITI I I II V V I

 9.6. Size:177K  foshan
ztx550 3ca550.pdf

ZTX555
ZTX555

ZTX550(3CA550) PNP /SILICON PNP TRANSISTOR :/Purpose: Medium power amplifier applications. :/Features: High P and I . C C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -45 V CEO V -5.0 V EBO I -1.0 A

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


ZTX555
  ZTX555
  ZTX555
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top