ZTX558
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZTX558
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar ZTX558
ZTX558
Datasheet (PDF)
..1. Size:56K diodes
ztx558.pdf 
PNP SILICON PLANAR MEDIUM POWER 8 ZTX558HIGH VOLTAGE TRANSISTORISSUE 1 APRIL 94 T V I V i B=10E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V1 10 20 II i V I V V i V I V V i II I Di i i i T T T =10ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI II V V I V I II i V V I V I i V V I V I 1 10
9.1. Size:59K diodes
ztx554 ztx555.pdf
PNP SILICON PLANAR4 ZTX554MEDIUM POWER TRANSISTORS5 ZTX555ISSUE 1 MARCH 94 T V I V i tfns1000800600E-LinetdnsTO92 Compatible400 100ABSOLUTE MAXIMUM RATINGS.200 50 T T T IT0 0 II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T
9.2. Size:53K diodes
ztx552 ztx553 2.pdf
PNP SILICON PLANAR2 ZTX552MEDIUM POWER TRANSISTORS3 ZTX553ISSUE 1 MARCH 94 T V I V tftsnSS3 600 i 2 400E-Line1 200TO92 CompatibleABSOLUTE MAXIMUM RATINGS.100 T T T IT0 0 II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T T T IT DITI I I II V V I
9.3. Size:55K diodes
ztx556 ztx557.pdf
PNP SILICON PLANAR MEDIUM POWER6 ZTX556HIGH VOLTAGE TRANSISTORS7 ZTX557ISSUE 1 JULY 94 T V I V tr i s2.01.51.0td E-LinensTO92 Compatible100ABSOLUTE MAXIMUM RATINGS.0.550 T T T IT0 0 II V I V V II i V I V V i V I V V I I i II I Di i i i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI
9.4. Size:90K diodes
ztx550 ztx551.pdf
PNP SILICON PLANAR0 ZTX550MEDIUM POWER TRANSISTORS1 ZTX551ISSUE 1 MARCH 94 T V I V i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT-10 II V I V 8 V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T T T IT DITI I I II V 8 V I -10 V I II i V V I i i V I
9.5. Size:50K diodes
ztx552 ztx553.pdf
PNP SILICON PLANAR2 ZTX552MEDIUM POWER TRANSISTORS3 ZTX553ISSUE 1 MARCH 94 T V I V tftsnSS3 600 i 2 400E-Line1 200TO92 CompatibleABSOLUTE MAXIMUM RATINGS.100 T T T IT0 0 II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T T T IT DITI I I II V V I
9.6. Size:177K foshan
ztx550 3ca550.pdf
ZTX550(3CA550) PNP /SILICON PNP TRANSISTOR :/Purpose: Medium power amplifier applications. :/Features: High P and I . C C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -45 V CEO V -5.0 V EBO I -1.0 A
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
