ZTX749 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZTX749PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.CTO-226BEAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -25 VVCBO Collector-Base Voltage -35 VVEBO Emitter-Base Voltage -5 VIC Collector Current -

PNP SILICON PLANAR9 ZTX749MEDIUM POWER TRANSISTORISSUE 1 APRIL 94. T V I V i i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I IT Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V V I I

ZTX749APNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.CTO-226BEAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -35 VVCBO Collector-Base Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -