ZTX750 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZTX750
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar ZTX750
ZTX750 Datasheet (PDF)
ztx750 ztx751.pdf
PNP SILICON PLANAR ZTX750MEDIUM POWER TRANSISTORSZTX751ISSUE 2 JULY 94 T . V I V i i I V VE-LineV V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V 8 V II i V I V V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I T I T II
ztx750 3ca750.pdf
ZTX750(3CA750) PNP /SILICON PNP TRANSISTOR :/Purpose: Medium power amplifier applications. :/Features: High P and I . C C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -45 V CEO V -5.0 V EBO I -2.0 A
ztx756 ztx757.pdf
PNP SILICON PLANAR MEDIUM POWERZTX756HIGH VOLTAGE TRANSISTORSZTX757ISSUE 2 JULY 94 T V I V i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I I
ztx752 ztx753.pdf
PNP SILICON PLANAR2 ZTX752MEDIUM POWER TRANSISTORS3 ZTX753ISSUE 2 JULY 94 T V I V i i I V VV VE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I T I T II V
ztx758.pdf
PNP SILICON PLANAR MEDIUM POWERZTX758HIGH VOLTAGE TRANSISTORISSUE 1 APRIL 94 T V I V i V V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I IT i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V
ztx751.pdf
A Product Line ofDiodes IncorporatedZTX75160V PNP MEDIUM POWER TRANSISTOR IN E-LINE Features Mechanical Data BVCEO > -60V Case: E-Line (TO-92 Compatible) IC = -2A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -6A Peak Pulse Current UL Flammability Classification Rating 94V-0 TJ up to +200C for Hi
ztx754 ztx755.pdf
PNP SILICON PLANARZTX754MEDIUM POWER TRANSISTORSZTX755ISSUE 2 JULY 94 T V I V i i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I I 1
ztx753dcsm.pdf
ZTX753DCSMPNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)1.40 0.152.29 0.20 1.65 0.13 FEATURES(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR PNP2 3TRANSISTORS14A0.236 5rad. HERMETIC SURFACE MOUNT PACKAGE(0.009)6.22
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050