ZTX756 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZTX756
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO92
Búsqueda de reemplazo de ZTX756
ZTX756 Datasheet (PDF)
ztx756 ztx757.pdf

PNP SILICON PLANAR MEDIUM POWERZTX756HIGH VOLTAGE TRANSISTORSZTX757ISSUE 2 JULY 94 T V I V i E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II V V I I V I II i V V I I
ztx752 ztx753.pdf

PNP SILICON PLANAR2 ZTX752MEDIUM POWER TRANSISTORS3 ZTX753ISSUE 2 JULY 94 T V I V i i I V VV VE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T IT i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I T I T II V
ztx758.pdf

PNP SILICON PLANAR MEDIUM POWERZTX758HIGH VOLTAGE TRANSISTORISSUE 1 APRIL 94 T V I V i V V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I IT i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V
ztx751.pdf

A Product Line ofDiodes IncorporatedZTX75160V PNP MEDIUM POWER TRANSISTOR IN E-LINE Features Mechanical Data BVCEO > -60V Case: E-Line (TO-92 Compatible) IC = -2A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound ICM = -6A Peak Pulse Current UL Flammability Classification Rating 94V-0 TJ up to +200C for Hi
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N3579 | ZT90 | 2N1208-1 | US6X8 | 2N3478 | ZTX849 | 2N1073B
History: 2N3579 | ZT90 | 2N1208-1 | US6X8 | 2N3478 | ZTX849 | 2N1073B



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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