BFG590 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG590

Código: N38

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5000 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT143B

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BFG590 datasheet

 ..1. Size:87K  philips
 bfg590 bfg590x 3.pdf pdf_icon

BFG590

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification 1998 Oct 02 Supersedes data of 1995 Sep 19 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequen

 0.1. Size:90K  philips
 bfg590w bfg590wx 3.pdf pdf_icon

BFG590

DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors 1998 Oct 15 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N Low noise figure page

 9.1. Size:76K  philips
 bfg591 2.pdf pdf_icon

BFG590

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor 1995 Sep 04 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION fpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 pack

 9.2. Size:314K  philips
 bfg591.pdf pdf_icon

BFG590

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transi

MOSTRAR MÁS

Otros transistores... 2SB1366F-O, BFG31, BFG403W, BFG425W, BFG505, BFG505W, BFG520, BFG520W, 2N5551, BFG590W, BFG591, BFG480W, BFM505, BFM520, BFQ131, BFQ151, BFQ166