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BFG590 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFG590
   Código: N38
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5000 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT143B
 

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BFG590 Datasheet (PDF)

 ..1. Size:87K  philips
 bfg590 bfg590x 3.pdf pdf_icon

BFG590

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D071BFG590; BFG590/XNPN 5 GHz wideband transistorsProduct specification 1998 Oct 02Supersedes data of 1995 Sep 19Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG590; BFG590/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG590 BFG590/X High transition frequen

 0.1. Size:90K  philips
 bfg590w bfg590wx 3.pdf pdf_icon

BFG590

DATA SHEETbook, halfpageM3D123BFG590W; BFG590W/XNPN 5 GHz wideband transistors1998 Oct 15Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG590W; BFG590W/XFEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistorin a 4-pin dual-emitter SOT343N Low noise figurepage

 9.1. Size:76K  philips
 bfg591 2.pdf pdf_icon

BFG590

DISCRETE SEMICONDUCTORSDATA SHEETBFG591NPN 7 GHz wideband transistor1995 Sep 04Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 7 GHz wideband transistor BFG591FEATURES DESCRIPTIONfpage4 High power gain NPN silicon planar epitaxial transistorin a plastic, 4-pin SOT223 pack

 9.2. Size:314K  philips
 bfg591.pdf pdf_icon

BFG590

DISCRETE SEMICONDUCTORS DATA SHEETBFG591NPN 7 GHz wideband transistorProduct specification 1995 Sep 04Supersedes data of November 1992NXP Semiconductors Product specificationNPN 7 GHz wideband transistor BFG591FEATURES DESCRIPTIONlfpage4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transi

MOSTRAR MÁS

Otros transistores... 2SB1366F-O , BFG31 , BFG403W , BFG425W , BFG505 , BFG505W , BFG520 , BFG520W , AC125 , BFG590W , BFG591 , BFG480W , BFM505 , BFM520 , BFQ131 , BFQ151 , BFQ166 .

History: D60T4040 | 2SC4161L

 

 
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