2N5430 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5430
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO66
Búsqueda de reemplazo de 2N5430
2N5430 Datasheet (PDF)
2n5430.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
2n5430x.pdf

2N5430XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
2n5432 2n5433 2n5434.pdf

2N5432/5433/5434Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N5432 4 to 10 5 10 2.52N5433 3 to 9 7 10 2.52N5434 1 to 4 10 10 2.5FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N5432
Otros transistores... 2N5424A , 2N5425 , 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A , 2N543 , TIP36C , 2N5435 , 2N5436 , 2N5437 , 2N5438 , 2N5439 , 2N543A , 2N544 , 2N5440 .
History: BUX27 | MPS1893R



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