BU1507DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU1507DX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 68 pF
Ganancia de corriente contínua (hfe): 14
Paquete / Cubierta: SOT186A
Búsqueda de reemplazo de transistor bipolar BU1507DX
BU1507DX Datasheet (PDF)
bu1507dx.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and computer monitors. Features exceptional tole
bu1507dx.pdf
isc Silicon NPN Power Transistor BU1507DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers and computer monitors.ABSOLUTE MAXIMUM RATIN
bu1507ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.Features exceptional tolerance to base drive and collecto
bu1507ax.pdf
isc Silicon NPN Power Transistor BU1507AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers and computer monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL
bu1508dx.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu1506dx.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu1508ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati
bu1506df.pdf
isc Silicon NPN Power Transistor BU1506DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu1508dx.pdf
isc Silicon NPN Power Transistor BU1508DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu1506dx.pdf
isc Silicon NPN Power Transistor BU1506DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu1508af.pdf
isc Silicon NPN Power Transistor BU1508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
bu1508ax.pdf
isc Silicon NPN Power Transistor BU1508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
bu1508df.pdf
isc Silicon NPN Power Transistor BU1508DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
