BU1507DX Datasheet. Equivalente

 ..1. Size:46K  philips
 bu1507dx.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tole

 ..2. Size:210K  inchange semiconductor
 bu1507dx.pdf

isc Silicon NPN Power Transistor BU1507DX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and computer monitors. ABSOLUTE MAXIMUM RATIN

 8.1. Size:45K  philips
 bu1507ax.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collecto

 8.2. Size:211K  inchange semiconductor
 bu1507ax.pdf

isc Silicon NPN Power Transistor BU1507AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL

 9.1. Size:51K  philips
 bu1508dx.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 9.2. Size:53K  philips
 bu1506dx.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 9.3. Size:59K  philips
 bu1508ax.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

 9.4. Size:215K  inchange semiconductor
 bu1506df.pdf

isc Silicon NPN Power Transistor BU1506DF DESCRIPTION High Voltage High Speed Switching Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage V =

 9.5. Size:209K  inchange semiconductor
 bu1508dx.pdf

isc Silicon NPN Power Transistor BU1508DX DESCRIPTION High Voltage High Speed Switching Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage V =

 9.6. Size:209K  inchange semiconductor
 bu1506dx.pdf

isc Silicon NPN Power Transistor BU1506DX DESCRIPTION High Voltage High Speed Switching Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage V =

 9.7. Size:213K  inchange semiconductor
 bu1508af.pdf

isc Silicon NPN Power Transistor BU1508AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 9.8. Size:209K  inchange semiconductor
 bu1508ax.pdf

isc Silicon NPN Power Transistor BU1508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.9. Size:215K  inchange semiconductor
 bu1508df.pdf

isc Silicon NPN Power Transistor BU1508DF DESCRIPTION High Voltage High Speed Switching Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage V =