BU2515AF Todos los transistores

 ..1. Size:50K  philips
 bu2515af 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0

 ..2. Size:211K  inchange semiconductor
 bu2515af.pdf

isc Silicon NPN Power Transistor BU2515AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

 7.1. Size:51K  philips
 bu2515ax bu2515ax 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0

 7.2. Size:216K  inchange semiconductor
 bu2515ax.pdf

isc Silicon NPN Power Transistor BU2515AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

 8.1. Size:54K  philips
 bu2515df 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter

 8.2. Size:217K  inchange semiconductor
 bu2515dx.pdf

isc Silicon NPN Power Transistor BU2515DX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.3. Size:213K  inchange semiconductor
 bu2515df.pdf

isc Silicon NPN Power Transistor BU2515DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM