BU2515AF
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2515AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45
W
Tensión colector-base (Vcb): 800
V
Tensión colector-emisor (Vce): 800
V
Tensión emisor-base (Veb): 13.5
V
Corriente del colector DC máxima (Ic): 9
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 22
pF
Ganancia de corriente contínua (hfe): 17.2
Paquete / Cubierta:
SOT199
Búsqueda de reemplazo de transistor bipolar BU2515AF
BU2515AF
Datasheet (PDF)
..1. Size:50K philips
bu2515af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0
..2. Size:211K inchange semiconductor
bu2515af.pdf
isc Silicon NPN Power Transistor BU2515AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
7.1. Size:51K philips
bu2515ax bu2515ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0
7.2. Size:216K inchange semiconductor
bu2515ax.pdf
isc Silicon NPN Power Transistor BU2515AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
8.1. Size:54K philips
bu2515df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter
8.2. Size:217K inchange semiconductor
bu2515dx.pdf
isc Silicon NPN Power Transistor BU2515DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.3. Size:213K inchange semiconductor
bu2515df.pdf
isc Silicon NPN Power Transistor BU2515DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
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