BU2522DX Todos los transistores

 ..1. Size:63K  philips
 bu2522dx 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal d

 7.1. Size:62K  philips
 bu2522df 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal d

 7.2. Size:213K  inchange semiconductor
 bu2522df.pdf

isc Silicon NPN Power Transistor BU2522DF DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 8.1. Size:58K  philips
 bu2522aw 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUI

 8.2. Size:55K  philips
 bu2522a 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for operation up to 64 kHz. QUICK REFERENCE DATA SYMBOL PARAM

 8.3. Size:260K  philips
 bu2522af.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 8.4. Size:216K  inchange semiconductor
 bu2522ax.pdf

isc Silicon NPN Power Transistor BU2522AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of pc monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

 8.5. Size:248K  inchange semiconductor
 bu2522af.pdf

isc Silicon NPN Power Transistor BU2522AF DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VA

 8.6. Size:119K  inchange semiconductor
 bu2522a.pdf