BCX6825 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 20V Case: SOT89 IC = 1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound. Low Saturation Voltage VCE(sat)

NPN Silicon AF Transistors BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 68 Q62702-C1572 B C E SOT-89BCX 68-10 CB Q62702-C1864BCX 68-16 CC Q62702-C1865BCX 68-25 CD Q62702-C1866Maximum Rat

CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI

CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI

CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI

SOT89 NPN SILICON PLANAR BCX68MEDIUM POWER TRANSISTORISSUE 3 FEBRUARY 2007 FEATURES* High gain and low saturation voltages CCOMPLEMENTARY TYPE BCX69PARTMARKING DETAIL BCX68 CEEBCX68-16 CCCBCX68-25 CDBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 25 VCollector-Emitter Voltage VCEO 20 VEmitter-Base

SMD Type TransistorsNPN TransistorsBCX68 (KCX68)1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=20V High gain and low saturation voltages0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 2