FZT1047A Todos los transistores

Introduzca al menos 3 números o letras

FZT1047A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FZT1047A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-emisor (Vce): 10 V

Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Ganancia de corriente contínua (hfe): 300

Empaquetado / Estuche: SOT223

Búsqueda de reemplazo de transistor bipolar FZT1047A

 

FZT1047A Datasheet (PDF)

1.1. fzt1047a.pdf Size:126K _diodes

FZT1047A
FZT1047A

SOT223 NPN SILICON PLANAR FZT1047A MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - AUGUST 1997 FEATURES C * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current E * Low Saturation Voltage C * High Gain B * Extremely Low Equivalent On-resistance; RCE(sat) = 44m? at 5A SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 V Collector-Emit

1.2. fzt1047a.pdf Size:1143K _kexin

FZT1047A
FZT1047A

SMD Type Transistors NPN Transistors FZT1047A (KZT1047A) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=10V ● Low Saturation Voltage 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base 2.Collector 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parame

4.1. fzt1049a.pdf Size:202K _diodes

FZT1047A
FZT1047A

SOT 223 NPN SILICON PLANAR FZT1049A MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - JUNE 2007 C FEATURES * VCEO = 25V E * 5 Amp Continuous Current * 20 Amp Pulse Current C * Low Saturation Voltage B * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50m? at 5A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Volta

4.2. fzt1048a.pdf Size:137K _diodes

FZT1047A
FZT1047A

NPN SILICON PLANAR MEDIUM POWER FZT1048A HIGH GAIN TRANSISTOR ISSUE 1- FEBRUARY 1997 FEATURES C * VCEO = 17.5V * 5 Amp Continuous Current E * 20 Amp Pulse Current C * Low Saturation Voltage B * High Gain SOT223 * Extremely Low Equivalent On-resistance; RCE(sat) = 50m? at 5A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter V

4.3. fzt1049a.pdf Size:991K _kexin

FZT1047A
FZT1047A

SMD Type Transistors NPN Transistors FZT1049A (KZT1049A) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=30V ● Low Saturation Voltage 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70±0.1 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Ra

4.4. fzt1048a.pdf Size:786K _kexin

FZT1047A
FZT1047A

SMD Type Transistors NPN Transistors FZT1048A (KZT1048A) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=17.5V ● Low Saturation Voltage 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70±0.1 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol

Otros transistores... FCX688B , FCX717 , FCX718 , FCX789A , FMMTL618 , FMMTL717 , FMMTL718 , FXT689B , TIP122 , FZT1048A , FZT1147A , FZT1149A , FZT717 , MMBT123S , MMDT4124 , MMDT4126 , MMDT4146 .

 


FZT1047A
  FZT1047A
  FZT1047A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |


Introduzca al menos 1 números o letras