2DB1184Q Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2DB1184Q
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 3 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 110 MHz
Ganancia de corriente contínua (hFE): 120
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2DB1184Q datasheet
2db1188p-q-r.pdf
2DB1188P/Q/R PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (2DD1766) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT89-3L Mechanical Data Case SOT89-3L
2db1182q.pdf
2DB1182Q 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data Epitaxial Planar Die Construction Case TO252 Low Collector-Emitter Saturation Voltage Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification
2db1188p 2db1188q 2db1188r.pdf
2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -32V Case SOT89 IC = -2A high Continuous Current Case material Molded Plastic, "Green" Molding Compound. Low saturation voltage VCE(sat)
Otros transistores... 2DA1774Q, 2DA1774QLP, 2DA1774R, 2DA1774S, 2DA1797, 2DB1132P, 2DB1132Q, 2DB1132R, 13009, 2DB1188P, 2DB1188Q, 2DB1188R, 2DB1694, 2DB1714, 2DC2412R, 2DC4617Q, 2DC4617QLP
History: GT402J | 2DB1132R | GT403V
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