2N546 Todos los transistores

Introduzca al menos 3 números o letras

2N546 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N546

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Capacitancia de salida (Cc): 120 pF

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO5

Búsqueda de reemplazo de transistor bipolar 2N546

 

2N546 Datasheet (PDF)

1.1. 2n5460 2n5461 2n5462.pdf Size:116K _motorola

2N546
2N546

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5460/D JFET Amplifiers 2N5460 PChannel Depletion 2 DRAIN thru 2N5462 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit DrainGate Voltage VDG 40 Vdc Reverse GateSource Voltage VGSR 40 Vdc 1 Forward Gate Current IG(f) 10 mAdc 2 3 Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C

1.2. 2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf Size:114K _fairchild_semi

2N546
2N546

2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25C unless otherwise noted - Sym

1.3. 2n5460 sst5460 2n5461 sst5461 2n5462 sst5462.pdf Size:48K _vishay

2N546
2N546

2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 1 2N/SST5461 1 to 7.5 40 1.5 2 2N/SST5462 1.8 to 9 40 2 4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage Amplifie

1.4. 2n5460 2n5461 2n5462.pdf Size:62K _central

2N546

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.5. 2n5460 2n5461 2n5462.pdf Size:60K _onsemi

2N546
2N546

2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features Pb-Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain - Gate Voltage VDG 40 Vdc GATE Reverse Gate - Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc 1 SOURCE Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Junction Temp

1.6. 2n5469.pdf Size:11K _semelab

2N546

2N5469 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.7. 2n5467.pdf Size:11K _semelab

2N546

2N5467 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 400V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.8. 2n5468.pdf Size:11K _semelab

2N546

2N5468 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.9. 2n5466 2n5467.pdf Size:130K _inchange_semiconductor

2N546
2N546

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 DESCRIPTION ·With TO-3 package ·High-voltage capability ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (

1.10. 2n5468 2n5469.pdf Size:129K _inchange_semiconductor

2N546
2N546

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 DESCRIPTION ·With TO-66 package ·High-voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) an

Otros transistores... 2N5448 , 2N5449 , 2N544A , 2N545 , 2N5450 , 2N5451 , 2N5455 , 2N5456 , D882 , 2N5466 , 2N5467 , 2N5468 , 2N5469 , 2N547 , 2N5470 , 2N5477 , 2N5478 .

 


2N546
  2N546
  2N546
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |


Introduzca al menos 1 números o letras