2N5467 Todos los transistores

2N5467 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 400V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5466 2N5467 DESCRIPTION With TO-3 package High-voltage capability Fast switching speeds Low collector saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin

isc Silicon NPN Power Transistor 2N5467 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE Source & Drain S Mark 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25 C unless otherwise noted -

2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 1 2N/SST5461 1 to 7.5 40 1.5 2 2N/SST5462 1.8 to 9 40 2 4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage

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2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features Pb-Free Packages are Available* http //onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain - Gate Voltage VDG 40 Vdc GATE Reverse Gate - Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc 1 SOURCE Total Device Dissipation @ TA = 25 C PD 350 mW Derate above 25 C 2.8 mW/ C Junct

2N5468 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N5469 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 400V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

isc Silicon NPN Power Transistor 2N5468 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular TO-66 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc Silicon NPN Power Transistor 2N5469 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular TO-66 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5468 2N5469 DESCRIPTION With TO-66 package High-voltage capability Fast switching speeds Low saturation voltage APPLICATIONS They are intended for use in off-line power supplies ,inverter and converter circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66)

isc Silicon NPN Power Transistor 2N5466 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P