MMBT2222AT
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT2222AT
Código: 1P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 40
V
Corriente del colector DC máxima (Ic): 0.6
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SOT523
Búsqueda de reemplazo de transistor bipolar MMBT2222AT
MMBT2222AT
Datasheet (PDF)
..1. Size:136K fairchild semi
mmbt2222at.pdf
September 2008MMBT2222ATNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B General purpose switching & amplification application Marking : A02 SOT-523FAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage 75 VVCEO Colle
..2. Size:345K diodes
mmbt2222at.pdf
MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:
..3. Size:250K mcc
mmbt2222at.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power Diss
..4. Size:222K mcc
mmbt2222at sot-523.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power DissipationPurpose Amplifier Operating and Storage Junction T
..5. Size:809K secos
mmbt2222at.pdf
MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim
..6. Size:4328K jiangsu
mmbt2222at.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT2907AT Small Package MARKING:1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL
..7. Size:417K wietron
mmbt2222at.pdf
MMBT2222ATCOLLECTORPlastic-Encapsulate Transistors33NPN Silicon 121BASEP b Lead(Pb)-FreeSC-892EMITTER (SOT-523F)MAXIMUM RATINGSValueRating SymbolUnit40Collector-Emitter Voltage VCEO Vdc75Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristics SymbolUnitMa
..8. Size:859K kexin
mmbt2222at.pdf
SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll
0.1. Size:114K onsemi
mmbt2222att1-d.pdf
MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25
0.2. Size:123K onsemi
mmbt2222att1g.pdf
MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang
0.3. Size:123K onsemi
nsvmmbt2222att1g.pdf
MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang
0.4. Size:123K onsemi
mmbt2222att3g.pdf
MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang
0.5. Size:119K onsemi
mmbt2222att1g nsvmmbt2222att1g.pdf
MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang
0.6. Size:357K willas
mmbt2222att1.pdf
FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order
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