MMBT2222AT Todos los transistores

September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking A02 SOT-523F Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Colle

MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Diss

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Dissipation Purpose Amplifier Operating and Storage Junction T

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT2907AT Small Package MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL

MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Ma

SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H Low profile surface mounted application in order