MMDT2222V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMDT2222V 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case: SOT563 Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Smal

MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Complementary PNP Type Available (MMDT2907A) Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.10 0.30 B C "Green" Device (Note 3 and 4) B 1.15 1.35 E2 B2 C1Mechanical Data C 2.00 2.20 D 0.65 Nominal Case: SOT-363 H Ca

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Epitaxial Die Construction Transistors Small Surface Mount Package Marking

MMDT2222ANPN Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363o.055(1.40)8* Features .047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.053(1.35)O .096(2.45).045(1.15)PCM : 0.15 W (Tamp.= 25 C) .085(2.15)Collector current.018(0.46).010(0.26)C1 B2 E2ICM : 0.6 A.014(0.35).006(0.15).006(0.15)

MMDT2222ANPN Silicon Epitaxial Planar Transistorfor general purpose and switching applications 6 5 4TR2TR11 2 31. Emitter 2. Base 3. Collector4. Emitter 5. Base 6. CollectorSimplified outline(SOT-363)OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 75 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V