MMDT3904 Todos los transistores

 ..1. Size:345K  diodes
 mmdt3904.pdf

MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (N

 ..2. Size:213K  mcc
 mmdt3904 sot-363.pdf

 ..3. Size:293K  secos
 mmdt3904.pdf

MMDT3904 NPN Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF Power dissipation (0.525)REF O PCM 0.2 W (Tamp.= 25 C) .053(1.35 .096(2.45) .045(1.15 .085(2.15) Collector current ICM 0.2 A .018(0.46) .010(0.26) .0

 ..4. Size:1652K  jiangsu
 mmdt3904.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT3904 DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Coll

 ..5. Size:260K  lge
 mmdt3904.pdf

MMDT3904 SOT-363 Dual Transistor(NPN) SOT-363 Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C

 ..6. Size:764K  kexin
 mmdt3904.pdf

SMD Type Transistors NPN Transistors MMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con

 ..7. Size:164K  panjit
 mmdt3904.pdf

MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-363, Plastic

 ..8. Size:499K  slkor
 mmdt3904.pdf

MMDT3904 Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package Also available in lead free version. APPLICATIONS General switching and amplification SOT-363 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER VALUE UNIT VCBO c

 ..9. Size:544K  fuxinsemi
 mmdt3904.pdf

 ..10. Size:2667K  cn twgmc
 mmdt3904.pdf

MMDT3904 MMDT3904 MMDT3904 MMDT39 0 4 DUAL TRANSISTOR(NPN+ NPN) FEATURES SOT-363 Epitaxial planar die construction 6 Ideal for low power amplification and switching 5 4 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Colle

 ..11. Size:384K  cn yangzhou yangjie elec
 mmdt3904.pdf

RoHS COMPLIANT MMDT3904 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K6N Equivalent circuit 1 / 5 S-S2843 Yangzhou Yangjie El

 ..12. Size:882K  cn doeshare
 mmdt3904.pdf

MMDT3904 MMDT3904 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5

 ..13. Size:517K  cn haohai electr
 mmdt3904.pdf

MMDT3904 DUAL TRANSISTOR NPN+NPN 0.2A, 40V, 60V SOT-363 Plastic-Encapsulate Transistors MMDT3904 DUAL TRANSISTOR NPN+NPN FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MAXIMUM RATINGS Ta=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base

 0.1. Size:175K  diodes
 mmdt3904v.pdf

MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) B C "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1

 0.2. Size:219K  diodes
 mmdt3904vc.pdf

MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case SOT563 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Lev

 0.3. Size:226K  mcc
 mmdt3904v sot-563.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3904V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

 0.4. Size:221K  mcc
 mmdt3904v.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT3904V Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

 0.5. Size:1354K  jiangsu
 mmdt3904v.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60

 0.6. Size:1256K  pjsemi
 mmdt3904sg.pdf

MMDT3904SG Double NPN Transistors Features SOT-23-6 For switching and amplifier applications 4.C2 5.E1 3.B2 6.C1 2.E2 Equivalent Circuit 1.B1 Marking Code 3904 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 40 V CEO Emitter Base Voltage

 0.7. Size:963K  cn cbi
 mmdt3904dw.pdf

SOT -363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) MMDT3904DW SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC

 0.8. Size:991K  cn cbi
 mmdt3904v.pdf

Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector