MMDT3946 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Complementary Pair One 3904-Type NPN Case: SOT363 One 3906-Type PNP Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Lev

MMDT3946Features Complementary Pari: NPN(3904), PNP(3906) Ideal for Low Power Amplification and SwitchingNPN/PNP Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1)Small Signal Surface Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingMount Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates Ro

MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. SOT-363 FEATURE A Complementary PairE One 3904-Type NPN LOne 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching B.MARKING FC HJD G K46 Millimeter MillimeterR

JC ET DUAL TRANSISTOR (NPN+PNP) 6 5 Complementary Pair 4 One 3904-Type NPN One 3906-Type PNP 123 Epitaxial Planar Die Construction Ideal for Low Po

MMDT3946 Complementary NPN/PNP TransistorSOT-363Features Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K46 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VC

MMDT3946COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES Epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current Ic = 200mA Transition Frequency> 300MHz fT@IC=10mA,VCE=20V, f=100MHz Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249

MMDT3946Small Surface Mount Transistor FEATURES Complementary pair. One 3904-Type NPN. One 3906-Type PNP. Ideal for low power amplification and switching. Ultra-Small surface mount package. Expitaxial planar die construction. SOT-363 APPLICATIONS General switching and amplification. MAXIMUM RATIPN Section @ Ta=25 unless otherwise specified SYMBOL PARAMETE

MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) DFN1310H4-6 Epitaxial Planar Die Construction Dim Min Max Typ Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) A 1.25 1.38 1.30 Green Device (Note 2) Top View B 0.95 1.08 1.00Mecha

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) MMDT3946DWSOT-363 FEATURES Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K46 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Co

MMDT3906 40V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -40V Case: SOT363 IC = -200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) BC Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20

MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (N

MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) BC "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1

MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case: SOT563 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

MMDT3906VCLead-free GreenDUAL PNP SMALL SIGNAL SURFACE MOUNTTRANSISTORFeatures Epitaxial Planar Die ConstructionA Ideal for Low Power Amplification and SwitchingC1 B2 E2 Ultra-Small Surface Mount PackageSOT-563 Lead Free By Design/RoHS Compliant (Note 1)BC Dim Min Max Typ "Green" Device (Note 4)A0.15 0.30 0.25E1 B1 C2B1.10 1.25 1.20Mechanic

MMDT3906Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operatin

MMDT3906VFeatures Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Oth

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT3906VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Ideal for Low Power Amplification and Switching Small Signal Surface Ultra-small Surface Mount Packa

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MMDT3906PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363 * Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O.053(1.35.096(2.45) PCM : 0.2 W (Tamp.=25 C).045(1.15.085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.2 A

MMDT3904NPN Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower dissipation(0.525)REFOPCM : 0.2 W (Tamp.= 25 C).053(1.35.096(2.45).045(1.15.085(2.15)Collector currentICM : 0.2 A.018(0.46).010(0.26).0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT3906 DUAL TRANSISTOR(PNP) FEATURES Epitaxial planar die construction Ideal for low power amplification and switching 1 MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitte

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT3904DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Coll

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60

MMDT3906SOT-363 Dual Transistor(PNP)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5

MMDT3904SOT-363 Dual Transistor(NPN)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC C

SMD Type TransistorsPNP TransistorsMMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current -

SMD Type TransistorsNPN TransistorsMMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con

MMDT3906DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 200 mWattVOLTAGEFEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

MMDT3904DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

MMDT3906 Dual PNP Small Signal TransistorsMMDT3906 Epoxy meets UL 94 V-0 flammability rating Lead Free Finish/RoHS Compliant For Switching and AF Amplifier Applications Rugged and reliable Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3904Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package Also available in lead free version. APPLICATIONS General switching and amplification SOT-363 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER VALUE UNITVCBO c

MMDT3904SG Double NPN TransistorsFeatures SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3904Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 60 VCBOCollector Emitter Voltage V 40 VCEOEmitter Base Voltage

MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3906Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollector Emitter Voltage -V 40 VCEOEmitter Base Vol

MMDT3906MMDT3906MMDT3906MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP)SOT-363 6 54FEATURES 1Epitaxial planar die construction 23Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Vo

MMDT3904MMDT3904MMDT3904MMDT39 0 4 DUAL TRANSISTOR(NPN+ NPN)FEATURES SOT-363 Epitaxial planar die construction 6 Ideal for low power amplification and switching 541MAXIMUM RATINGS (Ta=25 unless otherwise noted)23Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 5 VIC Colle

RoHS COMPLIANT MMDT3906 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: K3N Equivalent circuit 1 / 5 S-S2844 Yangzhou

RoHSCOMPLIANT MMDT3904Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPNMechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable perJ-STD-002 and JESD22-B102 Marking: K6NEquivalent circuit 1 / 5 S-S2843 Yangzhou Yangjie El

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3904 MMDT3904 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5

SOT-363 Plastic-Encapsulate TransistorsSOT-363 DUAL TRANSISTOR (PNP+PNP) MMDT3906DWFEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO

SOT -363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) MMDT3904DW SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC

Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector

MMDT3904DUAL TRANSISTORNPN+NPN0.2A, 40V, 60V SOT-363 Plastic-Encapsulate Transistors MMDT3904DUAL TRANSISTORNPN+NPNFEATURESEpitaxial planar die constructionIdeal for low power amplification and switchingMAXIMUM RATINGSTa=25 unless otherwise notedSymbol Parameter Value UnitsVCBOCollector-Base