MMST3906
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMST3906
Código: K5N_R2A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 40
V
Corriente del colector DC máxima (Ic): 0.2
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
SOT323
Búsqueda de reemplazo de transistor bipolar MMST3906
MMST3906
Datasheet (PDF)
..1. Size:121K rohm
umt3906 sst3906 mmst3906.pdf
UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 Dimensions (Unit : mm) Features UMT39061) BVCEO > -40V (IC= -1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. (1) Emitter(2) BaseROHM : UMT3EIAJ : SC-70 (3) Collector Package, marking, and packaging specifications SST3906 Type UMT3906 SST3906 MMST
..2. Size:399K diodes
mmst3906.pdf
MMST3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > -40V Case: SOT323 Case Material: Molded Plastic. Green Molding Compound. IC = -200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:
..3. Size:197K mcc
mmst3906 sot-323.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMST3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epitaxial Planar Die ConstructionPNP Small Signal Complementary NPN Type available (MMST3904) Ultra-small surface mount packageTransistors Marking : K5N Lead Free Finish/RoHS Compliant ("P" Suff
..4. Size:780K jiangsu
mmst3906.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST3906 TRANSISTOR (PNP)SOT323 FEATURES Complementary to MMST3904MARKING:K5NMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEV Collector-Base Voltage -40 V CBO2. EMITTERV Collector-Emitter Voltage -40 V CEO3. COLLECTORV Emitter-Base
..5. Size:363K htsemi
mmst3906.pdf
MMST3906TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO2. EMITTER V Collector-Emitter Voltage -40 V CEO3. COLLECTOR V Emitter-Base Voltage -5 V EBOIC Collector Current -200 mA P Collector Power Dissipation 200 m
..6. Size:792K kexin
mmst3906.pdf
SMD Type TransistorsPNP TransistorsMMST3906 (MMST3906) Features Epitaxial planar die construction Complementary to MMST39041.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -20
..7. Size:1735K cn yongyutai
mmst3906.pdf
MMST3906SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO2. EMITTER V Collector-Emitter Voltage -40 V CEO3. COLLECTOR V Emitter-Base Voltage -5 V EBOIC Collector C
7.1. Size:137K rohm
umh2n umt3904 sst3904 mmst3904 2.pdf
General purpose (dual digital transistors) EMH2 / UMH2N / IMH2A Features Two DTC144Es chips in a EMT or UMT or SMT package. Dimensions (Unit : mm) 1) EMH22) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) ( )3(5) (2)3) Transistor elements are independent, eliminating interference. ( ) (1)61.24) Mounting cost and area can be cut in h
7.2. Size:140K rohm
umd9n umt3904 sst3904 mmst3904 3.pdf
Digital Transistor (Dual Digital Transistors for Inverter Drive) EMD9 / UMD9N / IMD9A Features Dimensions (Unit : mm) 1) DTA114Y and DTC114Y transistors are built-in a EMT EMD9 or UMT or SMT package. (4) (3)(5) (2)(6) (1)Inner circuit 1.21.6EMD9 / UMD9N IMD9A(3) (2) (1) (4) (5) (6)R1 R2 R1 R2Each lead has same dimensionsDTr1 DTr1DTr2 DTr2 ROHM : EMT6
7.3. Size:103K rohm
umt3904 sst3904 mmst3904.pdf
UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 Features Dimensions (Unit : mm) 1) BVCEO > 40V (IC = 1mA) UMT39042) Complements the UMT3906 / SST3906 / MMST3906. (1) Emitter ROHM : UMT3(2) BaseEIAJ : SC-70(3) CollectorSOT-323SST3904 Package, marking and packaging specifications Part No. UMT3904 SST3904 MMST39
7.4. Size:202K diodes
mmst3904.pdf
MMST3904 60V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > 40V Case: SOT323 Case Material: Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals: F
7.5. Size:751K mcc
mmst3904.pdf
MMST3904Features Epitaxial Planar Die Construction Complementary PNP Type Available MMST3906NPN Ultra-Small Surface Mount Package Halogen Free Available Upon Request By Adding Suffix "-HF"Small Signal Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingTransistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant
7.6. Size:2135K jiangsu
mmst3904.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate TransistorsMMST3904 TRANSISTOR (NPN) SOT323 FEATURES Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Value Unit Symbol1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO3. COLLECTOR
7.7. Size:325K htsemi
mmst3904.pdf
MMST3904TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA P Collector Power Dissipation 200 mW
7.8. Size:1116K kexin
mmst3904.pdf
SMD Type TransistorsNPN TransistorsMMST3904 (KMST3904) Features Epitaxial planar die construction Complementary to MMST39061.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 200 mA
7.9. Size:588K born
mmst3904.pdf
MMST3904NPN Plastic-Encapsulate TransistorFeaturesPin ConfigurationsV CE = 60V3 COLLECTORI C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE2 EMITTERGeneral Description As complementary type the PNP transistorMMST3906 is recommended Epitaxial planar die constructio SOT-323 Plastic Package.Applying Amplifiers and switchingAbsolute Maximu
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