ZXT12P40DX Todos los transistores

 

ZXT12P40DX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXT12P40DX

Código: T12P40DX

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.25 W

Tensión colector-emisor (Vce): 40 V

Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Ganancia de corriente contínua (hFE): 300

Encapsulados: MSOP-8

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ZXT12P40DX datasheet

 ..1. Size:327K  diodes
zxt12p40dx.pdf pdf_icon

ZXT12P40DX

ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

 8.1. Size:264K  diodes
zxt12p12dx.pdf pdf_icon

ZXT12P40DX

ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

 8.2. Size:260K  diodes
zxt12p20dx.pdf pdf_icon

ZXT12P40DX

ZXT12P20DX SuperSOT4 DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 64m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. M

 9.1. Size:265K  diodes
zxt12n20dx.pdf pdf_icon

ZXT12P40DX

ZXT12N20DX SuperSOT4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

Otros transistores... ZDT6790 , ZUMT619 , ZUMT720 , ZX5T3Z , ZX5T949G , ZXT10N50DE6 , ZXT10P40DE6 , ZXT12N50DX , 9014 , ZXT13N50DE6 , ZXT13P40DE6 , ZXT690BK , ZXT790AK , ZXT849K , ZXTC2045E6 , ZXTC2063E6 , ZXTC4591AMC .

History: 2SD362

 

 

 


History: 2SD362

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