ZXT12P40DX Todos los transistores

 

ZXT12P40DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXT12P40DX
   Código: T12P40DX
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.25 W
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 130 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: MSOP-8
 

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ZXT12P40DX Datasheet (PDF)

 ..1. Size:327K  diodes
 zxt12p40dx.pdf pdf_icon

ZXT12P40DX

ZXT12P40DXSuperSOT4DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-40V; RSAT = 75m ; IC= -2ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 8.1. Size:264K  diodes
 zxt12p12dx.pdf pdf_icon

ZXT12P40DX

ZXT12P12DXSuperSOT4DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 47m ; IC= -3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

 8.2. Size:260K  diodes
 zxt12p20dx.pdf pdf_icon

ZXT12P40DX

ZXT12P20DXSuperSOT4DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 64m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.M

 9.1. Size:265K  diodes
 zxt12n20dx.pdf pdf_icon

ZXT12P40DX

ZXT12N20DXSuperSOT4DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 3.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: ZXTP03200BZ

 

 
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