ZXTN2007G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXTN2007G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3
W
Tensión colector-emisor (Vce): 30
V
Corriente del colector DC máxima (Ic): 7
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT223
Búsqueda de reemplazo de transistor bipolar ZXTN2007G
ZXTN2007G
Datasheet (PDF)
..1. Size:431K diodes
zxtn2007g.pdf
GreenZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 30V Case: SOT223 IC = 7A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
6.1. Size:135K diodes
zxtn2007z.pdf
ZXTN2007Z30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = 30V : RSAT = 23m ; IC = 6.0ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 30V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT89 Extemely low equivalent on-resistance; RS
7.1. Size:523K diodes
zxtn2005zq.pdf
ZXTN2005ZQ 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data Case: SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features
7.2. Size:471K diodes
zxtn2005g.pdf
A Product Line of Diodes Incorporated GreenZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 60V Case: SOT223 IC = 7A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)
7.3. Size:104K diodes
zxtn2005z.pdf
ZXTN2005Z25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = 25V : RSAT = 25m ; IC = 5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 25V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURES Extremely low equivalent on-resistance; RSAT = 2
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
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, 2SA1804R
, 2SA1805
, 2SA1805O
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, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.