ZXTN2031F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXTN2031F  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 125 MHz

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT23

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ZXTN2031F datasheet

 ..1. Size:401K  diodes
zxtn2031f.pdf pdf_icon

ZXTN2031F

A Product Line of Diodes Incorporated ZXTN2031F 50V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 50V Case SOT23 BVCEV > 80V Forward Blocking Voltage Case Material Molded Plastic, Green Molding Compound IC = 5A high Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 12A Peak Collector Current

 7.1. Size:130K  diodes
zxtn2038f.pdf pdf_icon

ZXTN2031F

A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V(BR)CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat)

 8.1. Size:483K  diodes
zxtn2040f.pdf pdf_icon

ZXTN2031F

A Product Line of Diodes Incorporated ZXTN2040F 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 40V Case SOT23 IC = 1A Continuous Collector Current Case material Molded Plastic. Green Molding Compound Low Saturation Voltage VCE(sat)

 8.2. Size:135K  diodes
zxtn2007z.pdf pdf_icon

ZXTN2031F

ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT89 Extemely low equivalent on-resistance; RS

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