ZXTP2008G Todos los transistores

 

ZXTP2008G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXTP2008G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 3 W
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 5.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 110 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar ZXTP2008G

 

ZXTP2008G Datasheet (PDF)

 ..1. Size:444K  diodes
zxtp2008g.pdf

ZXTP2008G ZXTP2008G

ZXTP2008G Green30V PNP LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -30V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 6.1. Size:489K  diodes
zxtp2008z.pdf

ZXTP2008G ZXTP2008G

GreenZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > -30V Case: SOT89 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 7.1. Size:126K  diodes
zxtp2009z.pdf

ZXTP2008G ZXTP2008G

ZXTP2009Z40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTORIN SOT89SUMMARYBVCEO = -40V : RSAT = 29m ; IC = -5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 40V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURESSOT89 Extremely low equivale

 7.2. Size:263K  diodes
zxtp2009zq.pdf

ZXTP2008G ZXTP2008G

ZXTP2009ZQ 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT89 requirement of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: F

 7.3. Size:94K  diodes
zxtp2006e6.pdf

ZXTP2008G ZXTP2008G

ZXTP2006E620V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6SUMMARYBVCEO = -20V : RSAT = 31m ; IC = -3.5ADESCRIPTIONPackaged in the SOT23-6 outline this new lowsaturation 20V PNP transistor offers extremely low onstate losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT23-6 3.5 Amps continuous current Extre

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top

 


ZXTP2008G
  ZXTP2008G
  ZXTP2008G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top