ZXTP2009Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXTP2009Z40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTORIN SOT89SUMMARYBVCEO = -40V : RSAT = 29m ; IC = -5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 40V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURESSOT89 Extremely low equivale

ZXTP2009ZQ 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT89 requirement of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: F

GreenZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Features Mechanical Data BVCEO > -30V Case: SOT89 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

ZXTP2008G Green30V PNP LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -30V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

ZXTP2006E620V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6SUMMARYBVCEO = -20V : RSAT = 31m ; IC = -3.5ADESCRIPTIONPackaged in the SOT23-6 outline this new lowsaturation 20V PNP transistor offers extremely low onstate losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT23-6 3.5 Amps continuous current Extre