MMST5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMST5401
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 150 V
Corriente del colector DC máxima (Ic): 0.2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar MMST5401
MMST5401 Datasheet (PDF)
mmst5401.pdf
SPICE MODEL: MMST5401MMST5401PNP SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures Epitaxial Planar Die ConstructionSOT-323 Complementary NPN Type Available (MMST5551)ADim Min Max Ideal for Medium Power Amplification and SwitchingC A0.25 0.40 Ultra-Small Surface Mount PackageB1.15 1.35B C Available in Lead Free/RoHS Compliant Version (Note 2)C2.00 2.20B ED0
mmst5401.pdf
MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMMST5401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.2A Marking : K4M Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS
mmst5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5401 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter
mmst5401.pdf
MMST5401TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBOV Collector-Emitter Voltage -150 V CEOV Emitter
mmst5401.pdf
SMD Type TransistorsPNP TransistorsMMST5401 (KMST5401) Features Small Surface Mount Package Ideal for Medium Power Amplificationand Switching Complementary to MMST55511.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 V Emitter - Base Vol
mmst5401.pdf
RoHS COMPLIANT MMST5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4M Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -150 Collector-Base Voltage VCBO
mmst5551.pdf
MMST5551180V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Ultra-Small Surface Mount Package Case Material: Molded Plastic. Green Molding Compound. Complementary NPN Type: MMST5401 UL Flammability Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1
mmst5551.pdf
MMST5551Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSSmall Signal Compliant. See Ordering Information)TransistorMaximum RatingsSOT-323 Operating Junction Temperature Range: -55 to +150 Storage
mmst5551.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors MMST5551 TRANSISTOR (NPN) SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter
mmst5551.pdf
MMST5551TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST5401 Small Surface Mount Package Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBOV Collector-Emitter Voltage 160 V CEOV Emitter-
mmst5551.pdf
SMD Type TransistorsNPN TransistorsMMST5551 (KMST5551) Features Small Surface Mount Package Ideal for Medium Power Amplification and Switching Complementary to MMST54011.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Volt
mmst5551.pdf
RoHS COMPLIANT MMST5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 Marking:K4N Maximum Rantings (Ta=25) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050