BC856AS Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC856AS
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 65 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 125
Encapsulados: SOT363
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BC856AS datasheet
bc856as.pdf
BC856AS 65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -65V Case SOT363 IC = -100mA High Collector Current Case Material Molded Plastic, Green Molding Compound. Complementary NPN Types Available (BC846AS) UL Flammability Classification Rating 94V-0 Ideally Suited for Automatic Insertion Moisture Sensi
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT 323/SC 70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices B
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter
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BC856; BC857; BC858 65 V, 100 mA PNP general-purpose transistors Rev. 7 16 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC BC856 SOT23 TO-236AB BC846 BC856A BC846A BC856B BC84
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DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G
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BC856W SERIES BC857W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE
bc856aw-bc858cw.pdf
BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Complementary NPN Types Available (BC846AW BC848CW) Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Ful
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BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not
bc856a-bc858c.pdf
BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not
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BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20
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BC856AW THRU BC858CW Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Tempera
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M C C BC856A R Micro Commercial Components Micro Commercial Components THRU 130 W Cochran St, Unit B Simi Valley, CA 93065 BC858C Tel 818-701-4933 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1 Ideally Suited for Au
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BC856A MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 BC858C Fax (818) 701-4939 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2
bc856alt1.pdf
BC856ALT1G Series General Purpose Transistors PNP Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage BC856 VCEO -65 V BC857 -45 BC858, BC859 -30 3 Collector-Base Voltage BC856 VCBO -80
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2
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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
bc856a-bc857a-bc858a.pdf
BC856A, B BC857A, B, C Elektronische Bauelemente BC858A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n A General Purpose Transistor PNP Type Dim Min Max L n Collect current - 0.1A A 2.800 3.040 O O n Operating Temp. -55 C +150 C 3 B 1.200 1.400 S Top View B n RoHS compliant product C 0.890 1.110 1 2 D 0.370 0.500 V G G 1.780 2.040 COLLE
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BC856AW, BW BC857AW, BW, CW Elektronische Bauelemente BC858AW, BW, CW RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 O O * Operating Temp. -55 C +150 C Dim Min Max A A 1.800 2.200 L B 1.150 1.350 C OLLE C TOR 3 C 0.800 1.000 S Top View 3 B 12 D 0.300 0.400 G 1.200 1.400 1 V G H 0.000 0.
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BC856A SERIES Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICA
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle
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BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B
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BC856A,B BC857A,B,C BC858A,B,C SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 Dimensions in inches and (millimeters
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BC856AW,BW BC857AW,BW,CW BC858AW,BW,CW STO-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)
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BC856AW/BW BC857AW/BW BC858AW/BW/CW COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25 Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 -65 VCEO BC857 -45 V BC858 -30 Collector-Base Voltage BC856 -80 VCBO BC857 -50 V BC858 -30 Emitter-Base Voltage BC856 -5.0
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit
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LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product
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LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an
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BC856AW BC859CW PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volts POWER 250 mWatts VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices BC846AW/BC847AW/BC848AW/ BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC
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BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES 0.120(3.04) General Purpose Amplifier Applications 0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices BC846/BC847/BC848/BC849 Series Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) 0.047(1.20) Green molding compound as per IEC61
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Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85
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BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC8
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R UMW UMW BC857 SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V B
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BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Package outline Features Moisture sensitivity level 1 SOT-23 ESD rating human body model >4000 V,machine model >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex
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BC856-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J;BC858B=3K;BC858C=3L; C B E Item Symbol Unit Conditions Value BC856 Collector-Base Voltage -80 -50 BC857 V VC
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www.msksemi.com BC856/57/58ABC Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARK BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L MAXIMUM RATINGS (T
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DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINALS SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT 0.008
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Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858 SOT-23 PNP TRANSISTOR 3 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit 2 BC856 -80 1.BASE Collector Base Voltage V BC8
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BC856/BC857/BC858 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858 Collector-Emitter Voltage -6
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BC856/BC857/BC858 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC856A=3A BC856B=3B Small Outline Plastic Package BC857A=
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BC856 THRU BC860 BC856 THRU BC860 BC856 THRU BC860 BC8 56 THRU BC8 60 TRANSISTOR(PNP) FEATURES Switching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits 1 BASE Low Noise BC859, BC860 2 EMITTER 3 COLLECTOR Complement to BC846 ... BC850 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec
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RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-
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RoHS RoHS COMPLIANT COMPLIANT BC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case SOT-323 Terminals Tin plated
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RoHS RoHS COMPLIANT COMPLIANT BC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Terminals T
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RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina
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RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated
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BC856-BC858 BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B
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BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD
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BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC856/BC857/BC858 FEATURES PNP General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter Voltage V -65 -45 -30 Vdc CEO C
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf
Plastic-Encapsulate Transistors (PNP) FEATURES BC856A/B (PNP) BC857A/B/C Ideally suited for automatic insertion BC858A/B/C (PNP) For Switching and AF Amplifier Applications Marking BC856A BC856B BC857A BC857B 3A 3B 3E 3F BC857C BC858A BC858B BC858C 1. BASE 3G 3J 3K 3L 2. EMITTER SOT-23 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit BC8
Otros transistores... ZXTP2014Z , ZXTP23140BFH , ZXTP25140BFH , ZXTP5401FL , ZXTP5401G , ZXTP5401Z , ZXTP558L , BC846AS , 8050 , BCP5210 , BCP5216 , BCP5310 , BCP5316 , BCP5510 , BCP5516 , BCP5610 , BCP5616 .
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