2N5491 Todos los transistores

 

2N5491 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5491
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.8 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2N5491

 

2N5491 Datasheet (PDF)

 ..1. Size:58K  inchange semiconductor
2n5491.pdf

2N5491
2N5491

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5491 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.1. Size:70K  central
2n5490 2n5492 2n5494 2n5496.pdf

2N5491

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.2. Size:237K  cdil
2n5496.pdf

2N5491
2N5491

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR 2N5496TO-220Plastic PackageMedium Power Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION VALUE UNITCollector Base Voltage (Open emitter) VCBO 90 VCollector Emitter Voltage(open base) VCEO 70 VCollector Emitter Voltage(Vbe=1.5

 9.3. Size:95K  jmnic
2n5498.pdf

2N5491
2N5491

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain and low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers,

 9.4. Size:118K  jmnic
2n5490 2n5492 2n5494 2n5496.pdf

2N5491
2N5491

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

 9.5. Size:58K  inchange semiconductor
2n5490.pdf

2N5491
2N5491

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5490 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.6. Size:106K  inchange semiconductor
2n5492.pdf

2N5491
2N5491

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5492 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.7. Size:143K  inchange semiconductor
2n5493.pdf

2N5491
2N5491

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5493 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output s

 9.8. Size:106K  inchange semiconductor
2n5495.pdf

2N5491
2N5491

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5495 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output sta

 9.9. Size:116K  inchange semiconductor
2n5498.pdf

2N5491
2N5491

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain Low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid

 9.10. Size:120K  inchange semiconductor
2n5490 2n5492 2n5494 2n5496.pdf

2N5491
2N5491

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI

 9.11. Size:106K  inchange semiconductor
2n5497.pdf

2N5491
2N5491

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5497 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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